Silicon NPN Epitaxial Planar(Low frequency power amplifier)
Parameter Name | Attribute value |
package instruction | IN-LINE, R-PSIP-T3 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Shell connection | COLLECTOR |
Maximum collector current (IC) | 2 A |
Collector-emitter maximum voltage | 60 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 150 |
JESD-30 code | R-PSIP-T3 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Polarity/channel type | NPN |
Maximum power dissipation(Abs) | 18 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |
Base Number Matches | 1 |
2SD2115L | 2SD2115(L)/(S) | 2SD2115 | 2SD2115S | |
---|---|---|---|---|
Description | Silicon NPN Epitaxial Planar(Low frequency power amplifier) | Silicon NPN Epitaxial Planar(Low frequency power amplifier) | Silicon NPN Epitaxial Planar(Low frequency power amplifier) | Silicon NPN Epitaxial Planar(Low frequency power amplifier) |
Reach Compliance Code | unknow | - | unknow | unknow |
Maximum collector current (IC) | 2 A | - | 2 A | 2 A |
Configuration | SINGLE | - | Single | SINGLE |
Polarity/channel type | NPN | - | NPN | NPN |
surface mount | NO | - | YES | YES |
Base Number Matches | 1 | - | 1 | 1 |