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2SD2115L

Description
Silicon NPN Epitaxial Planar(Low frequency power amplifier)
CategoryDiscrete semiconductor    The transistor   
File Size26KB,5 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
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2SD2115L Overview

Silicon NPN Epitaxial Planar(Low frequency power amplifier)

2SD2115L Parametric

Parameter NameAttribute value
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)150
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)18 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1

2SD2115L Related Products

2SD2115L 2SD2115(L)/(S) 2SD2115 2SD2115S
Description Silicon NPN Epitaxial Planar(Low frequency power amplifier) Silicon NPN Epitaxial Planar(Low frequency power amplifier) Silicon NPN Epitaxial Planar(Low frequency power amplifier) Silicon NPN Epitaxial Planar(Low frequency power amplifier)
Reach Compliance Code unknow - unknow unknow
Maximum collector current (IC) 2 A - 2 A 2 A
Configuration SINGLE - Single SINGLE
Polarity/channel type NPN - NPN NPN
surface mount NO - YES YES
Base Number Matches 1 - 1 1
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