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SD211DE

Description
Small Signal Field-Effect Transistor, 0.05A I(D), 10V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, TO-72, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size115KB,2 Pages
ManufacturerUniversal Semiconductor Inc
Download Datasheet Parametric View All

SD211DE Overview

Small Signal Field-Effect Transistor, 0.05A I(D), 10V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, TO-72, 4 PIN

SD211DE Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-72
package instructionCYLINDRICAL, O-MBCY-W4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW THRESHOLD
Shell connectionSUBSTRATE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage10 V
Maximum drain current (Abs) (ID)0.05 A
Maximum drain current (ID)0.05 A
Maximum drain-source on-resistance70 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.5 pF
JEDEC-95 codeTO-72
JESD-30 codeO-MBCY-W4
JESD-609 codee0
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature125 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

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