2SD1801 datasheet, PDF - EEWORLD Datasheet

2SD1801: DescriptionHigh-Current Switching Applications; CategoryDiscrete semiconductor The transistor; File Size125KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SD1801 Overview

High-Current Switching Applications

Parameter Name	Attribute value
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	15 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
Base Number Matches	1

	2SD1801	SD1801	2SB1201
Description	High-Current Switching Applications	High-Current Switching Applications	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN
package instruction	IN-LINE, R-PSIP-T3	-	IN-LINE, R-PSIP-T3
Contacts	3	-	3
Reach Compliance Code	unknow	-	unknown
ECCN code	EAR99	-	EAR99
Shell connection	COLLECTOR	-	COLLECTOR
Maximum collector current (IC)	2 A	-	2 A
Collector-emitter maximum voltage	50 V	-	50 V
Configuration	SINGLE	-	SINGLE
Minimum DC current gain (hFE)	40	-	40
JESD-30 code	R-PSIP-T3	-	R-PSIP-T3
Number of components	1	-	1
Number of terminals	3	-	3
Maximum operating temperature	150 °C	-	150 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR
Package form	IN-LINE	-	IN-LINE
Polarity/channel type	NPN	-	PNP
Maximum power dissipation(Abs)	15 W	-	15 W
Certification status	Not Qualified	-	Not Qualified
surface mount	NO	-	NO
Terminal form	THROUGH-HOLE	-	THROUGH-HOLE
Terminal location	SINGLE	-	SINGLE
transistor applications	SWITCHING	-	SWITCHING
Transistor component materials	SILICON	-	SILICON
Nominal transition frequency (fT)	150 MHz	-	150 MHz

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