RF3374 datasheet, PDF - EEWORLD Datasheet

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RF3374: DescriptionWide Band Low Power Amplifier, 0MHz Min, 6000MHz Max, 1 Func, GAAS, ROHS COMPLIANT, SOT-89, 3 PIN; CategoryWireless rf/communication Radio frequency and microwave; File Size239KB，8 Pages; ManufacturerQorvo; Websitehttps://www.qorvo.com; Environmental Compliance

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RF3374 Overview

Wide Band Low Power Amplifier, 0MHz Min, 6000MHz Max, 1 Func, GAAS, ROHS COMPLIANT, SOT-89, 3 PIN

RF3374 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	TO-243
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE, HIGH RELIABILITY
Characteristic impedance	50 Ω
structure	COMPONENT
Gain	17 dB
Maximum input power (CW)	13 dBm
JESD-609 code	e3
Installation features	SURFACE MOUNT
Number of functions	1
Number of terminals	3
Maximum operating frequency	6000 MHz
Minimum operating frequency
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Encapsulate equivalent code	TO-243
power supply	4.5 V
RF/Microwave Device Types	WIDE BAND LOW POWER
Maximum slew rate	80 mA
surface mount	YES
technology	GAAS
Terminal surface	Matte Tin (Sn)
Maximum voltage standing wave ratio	2
Base Number Matches	1

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RF3374Gen-

eral Purpose

Amplifier

RF3374

GENERAL PURPOSE AMPLIFIER

RoHS Compliant & Pb-Free Product

Package Style: SOT89

Features

DC to >6000MHz Operation

Internally Matched Input and

Output

20dB Small Signal Gain

+32dBm Output IP3

+18dBm Output Power

RF IN

GND

RF OUT

GaAs pHEMT

Si CMOS

Si BJT

Applications

Basestation Applications

Broadband, Low-Noise Gain

Blocks

IF or RF Buffer Amplifiers

Driver Stage for Power Amplifiers

Final PA for Low-Power Applica-

tions

High Reliability Applications

Functional Block Diagram

Product Description

The RF3374 is a general purpose, low-cost RF amplifier IC. The device is manufac-

tured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) pro-

cess, and has been designed for use as an easily-cascadable 50Ω gain block.

Applications include IF and RF amplification in wireless voice and data communica-

tion products operating in frequency bands up to 6000MHz. The device is self-con-

tained with 50Ω input and output impedances and requires only two external DC-

biasing elements to operate as specified.

Ordering Information

RF3374

RF3374PCBA-410

General Purpose Amplifier

Fully Assembled Evaluation Board

Optimum Technology Matching® Applied

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaN HEMT

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

Rev A8 DS050524

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

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RF3374 Related Products

	RF3374
Description	Wide Band Low Power Amplifier, 0MHz Min, 6000MHz Max, 1 Func, GAAS, ROHS COMPLIANT, SOT-89, 3 PIN
Is it Rohs certified?	conform to
package instruction	TO-243
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE, HIGH RELIABILITY
Characteristic impedance	50 Ω
structure	COMPONENT
Gain	17 dB
Maximum input power (CW)	13 dBm
JESD-609 code	e3
Installation features	SURFACE MOUNT
Number of functions	1
Number of terminals	3
Maximum operating frequency	6000 MHz
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Encapsulate equivalent code	TO-243
power supply	4.5 V
RF/Microwave Device Types	WIDE BAND LOW POWER
Maximum slew rate	80 mA
surface mount	YES
technology	GAAS
Terminal surface	Matte Tin (Sn)
Maximum voltage standing wave ratio	2
Base Number Matches	1

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