12A, 200V, 0.255ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Reach Compliance Code | not_compliant |
ECCN code | EAR99 |
Is Samacsys | N |
Other features | RADIATION HARDENED |
Shell connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 200 V |
Maximum drain current (Abs) (ID) | 12 A |
Maximum drain current (ID) | 12 A |
Maximum drain-source on-resistance | 0.255 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-257AA |
JESD-30 code | R-MSFM-P3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | METAL |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum power consumption environment | 75 W |
Maximum power dissipation(Abs) | 75 W |
Maximum pulsed drain current (IDM) | 36 A |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | PIN/PEG |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Transistor component materials | SILICON |
Base Number Matches | 1 |