SFH692AT
Photodarlington Optocoupler
High BV
CEO
Voltage
Miniflat SOP Package
FEATURES
• Current Transfer Ratio, min. 1000%
• SOP (Small Outline Package)
• Isolation Test Voltage, 3750 V
RMS
(1.0 s)
• High Collector-Emitter Breakdown Voltage,
V
CEO
=300 V
• Low Saturation Voltage
• Fast Switching Times
• Field-Effect Stable by TRIOS
(TRansparent IOn Shield)
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100” (2.54 mm) Spacing
• Underwriters Lab File #52744
APPLICATIONS
• High density mounting or space sensitive PCBs
• PLCs
• Telecommunication
DESCRIPTION
The SFH692AT has a GaAs infrared emitting diode emit-
ter, which is optically coupled to a silicon planar photo-
darlington detector, and is incorporated in a 4 pin 100 mil
lead pitch miniflat package. It features a high current
transfer ratio, low coupling capacitance, and high isola-
tion voltage.
The coupling devices are designed for signal transmis-
sion between two electrically separated circuits.
The SFH692AT will be offered in tape and reel format
only. There are 2000 parts per reel.
Absolute Maximum Ratings,
T
A
=25
°
C (except where noted)
Emitter
DC Forward Current.......................................................................50 mA
Reverse Voltage ............................................................................... 6.0 V
Surge Forward Current (t
P
≤
10
µ
s)....................................................2.5 A
Total Power Dissipation ............................................................... 80 mW
Detector
Collector-Emitter Voltage ................................................................ 300 V
Emitter-Collector Voltage ................................................................. 0.3 V
Collector Current............................................................................50 mA
Collector Current (t
P
≤
1.0 ms).......................................................150 mA
Total Power Dissipation ............................................................. 200 mW
Package
Isolation Test Voltage between Emitter and
Detector (1.0 s)....................................................................3750 V
RMS
Creepage...................................................................................
≥
5.0 mm
Clearance ..................................................................................
≥
5.5 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1 ..............................................
≥
175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C ...............................................................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C .............................................................
≥
10
11
Ω
Storage Temperature Range ............................................. –55 to +150
°
C
Ambient Temperature Range............................................ –55 to +100
°
C
Junction Temperature .................................................................... 100
°
C
Soldering Temperature (max. 10 s Dip Soldering
Distance to Seating Plane
≥
1.5 mm) .......................................... 260
°
C
4
3
Anode 1
0.190 (4.83)
0.170 (4.32)
4 Collector
Cathode 2
3 Emitter
1
2
0.024 (0.61)
0.034 (0.86)
0.080 (2.03)
0.075 (1.91)
Pin one I.D. (on chamfer side of package)
0.184 (4.67)
0.220 (5.59)
0.164 (4.17)
0.200 (5.08)
40°
0.017 (0.43)
6°
0.013 (0.35)
10°
0.008 (0.20)
0.004 (0.10)
0.018 (0.46)
0.014 (0.36)
0.105 (2.67)
0.095 (2.41)
Leads Coplanarity
0.004 (0.10) Max.
0.025 (0.63)
0.015 (0.38)
0.284 (7.21)
0.264 (6.71)
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
1
May 25, 2000-09
Table 1. Electrical Characteristics,
T
A
=25
°
C (except where noted)
Description
Emitter (IR GaAs)
Forward Voltage
Reverse Current
Capacitance
Thermal Resistance
Symbol
Min.
Typ.
Max.
Unit
Condition
V
F
I
R
C
0
R
thJA
—
—
—
—
1.2
0.01
14
750
1.5
10
—
—
V
µ
A
pF
K/W
I
F
=10 mA
V
R
=6.0 V
V
R
=0.0 V, f=1.0 MHz
—
Detector (Si Photodarlington)
Leakage Current, Collector-emitter
Capacitance
Thermal Resistance
I
CEO
C
CE
R
thJA
—
—
—
—
39
500
200
—
—
nA
pF
K/W
V
CE
=200 V
V
CE
=5.0 V, f=1.0 MHz
—
Package
Collector-emitter Saturation Voltage
Collector-emitter Saturation Voltage
Coupling Capacitance
Current Transfer Ratio
Saturated CTR
V
CESAT
V
CESAT
C
C
CTR
CTR
(SAT)
—
0.3
—
1000
500
—
—
0.6
—
—
1.0
1.2
—
—
—
V
V
pF
%
%
I
F
=1.0 mA,
I
C
=10 mA
I
F
=10 mA,
I
C
=100 mA
f=1.0 MHz, V
I-O
=0 V
I
F
=1.0 mA,
V
CE
=1.0 V
I
F
=10 mA,
V
CE
=1.0 V
Switching Times
(Typical)
Figure 1. Linear operation
(without saturation)
Table 2.
Switching Times,
I
F
=10.0 mA,
V
CC
=10.0 V,
T
A
=25
°
C
Parameter
V
CC
=10.0 V
I
F
R
L
=100
Ω
V
O
Symbol
R
L
t
r
t
f
t
on
t
off
Value
100
3.5
14.5
4.5
29.0
Unit
Ω
µ
s
Load Resistance
Rise Time
Fall Time
Turn-on Time
Turn-off Time
Table 3.
Switching Times,
I
F
=16.0 mA,
V
CC
=10.0 V,
T
A
=25
°
C
Parameter
Load Resistance
Rise Time
Fall Time
Turn-on Time
Turn-off Time
Symbol
R
L
Value
180
1.0
20.5
1.5
53.5
Unit
Ω
µ
s
t
r
t
f
t
on
t
off
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
SFH692AT
2
May 25, 2000-09
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