2SB903 datasheet, PDF - EEWORLD Datasheet

2SB903: DescriptionPower Bipolar Transistor, 12A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size106KB，3 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SB903 Overview

Power Bipolar Transistor, 12A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN

Parameter Name	Attribute value
Objectid	1481156517
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	12 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Maximum power consumption environment	35 W
Maximum power dissipation(Abs)	35 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	120 MHz
VCEsat-Max	0.5 V

	2SB903	2SD1212
Description	Power Bipolar Transistor, 12A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN	Power Bipolar Transistor, 12A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN
Objectid	1481156517	1481156643
Parts packaging code	TO-220AB	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	12 A	12 A
Collector-emitter maximum voltage	30 V	30 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	30	30
JEDEC-95 code	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	PNP	NPN
Maximum power consumption environment	35 W	35 W
Maximum power dissipation(Abs)	35 W	35 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	120 MHz	120 MHz
VCEsat-Max	0.5 V	0.4 V

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