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MT47H128M4GB-25E:B

Description
DDR DRAM, 128MX4, 0.4ns, CMOS, PBGA60, 12 X 10 MM, FBGA-60
Categorystorage    storage   
File Size9MB,139 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Download Datasheet Parametric View All

MT47H128M4GB-25E:B Overview

DDR DRAM, 128MX4, 0.4ns, CMOS, PBGA60, 12 X 10 MM, FBGA-60

MT47H128M4GB-25E:B Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicron Technology
Parts packaging codeBGA
package instructionTFBGA, BGA60,9X11,32
Contacts60
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
access modeFOUR BANK PAGE BURST
Maximum access time0.4 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)400 MHz
I/O typeCOMMON
interleaved burst length4,8
JESD-30 codeR-PBGA-B60
JESD-609 codee0
length12 mm
memory density536870912 bit
Memory IC TypeDDR DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals60
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA60,9X11,32
Package shapeRECTANGULAR
Package formGRID ARRAY
Peak Reflow Temperature (Celsius)235
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length4,8
Maximum standby current0.007 A
Maximum slew rate0.3 mA
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead/Silver (Sn/Pb/Ag)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width10 mm
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