IRKC56-08 datasheet, PDF - EEWORLD Datasheet

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IRKC56-08: Description60A, 800V, SILICON, RECTIFIER DIODE, POWER, ADD-A-PAK-3; CategoryDiscrete semiconductor diode; File Size172KB，9 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRKC56-08 Overview

60A, 800V, SILICON, RECTIFIER DIODE, POWER, ADD-A-PAK-3

IRKC56-08 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	R-PUFM-X3
Contacts	3
Reach Compliance Code	unknown
Is Samacsys	N
Other features	LEAKAGE CURRENT IS NOT AT 25 DEG C
application	POWER
Shell connection	ISOLATED
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.35 V
JESD-30 code	R-PUFM-X3
Maximum non-repetitive peak forward current	1680 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	60 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	800 V
Maximum reverse current	10000 µA
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Base Number Matches	1

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Bulletin I27140 rev. E 10/02

IRK.56, .71 SERIES

STANDARD DIODES

Features

High Voltage

Industrial Standard Package

Thick Al metal die and double stick bonding

Thick copper baseplate

UL E78996 approved

3500V

RMS

isolating voltage

ADD-A-pak

GEN V Power Modules

Benefits

Up to 1600V

Full compatible TO-240AA

High Surge capability

Easy Mounting on heatsink

DBC insulator

Heatsink grounded

60 A

80 A

Mechanical Description

The Generation V of Add-A-pak module combine the

excellent thermal performance obtained by the usage

of Direct Bonded Copper substrate with superior

mechanical ruggedness, thanks to the insertion of a

solid Copper baseplate at the bottom side of the device.

The Cu baseplate allow an easier mounting on the

majority of heatsink with increased tolerance of surface

roughness and improve thermal spread.

The Generation V of AAP module is manufactured

without hard mold, eliminating in this way any possible

direct stress on the leads.

The electrical terminals are secured against axial pull-out:

they are fixed to the module housing via a click-stop

feature already tested and proved as reliable on other IR

modules.

Electrical Description

These modules are intended for general purpose high

voltage applications such as high voltage regulated power

supplies, lighting circuits, temperature and motor speed

control circuits, UPS and battery charger.

Major Ratings and Characteristics

Parameters

F(AV)

@ 100°C

F(RMS)

FSM

@ 50Hz

@ 60Hz

t @ 50Hz

@ 60Hz

√t

RRM

range

STG

IRK.56

1600

1680

12.89

11.76

128.9

IRK.71

126

1790

1870

15.90

14.53

159

Units

√s

400 to 1600

- 40 to 150

- 40 to150

www.irf.com

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