P6SMB Series
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching
and lighting on ICs, MOSFET, signal lines of
sensor units for consumer, computer, industrial and
telecommunication.
MECHANICAL DATA
Case:
DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity:
For uni-directional types the band denotes
cathode end, no marking on bi-directional types
DO-214AA (SMB)
PRIMARY CHARACTERISTICS
V
BR
uni-directional
V
BR
bi-directional
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
6.8 V to 540 V
6.8 V to 220 V
600 W
5.0 W
100 A
150 °C
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g.
P6SMB10CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak power dissipation with a 10/1000 µs waveform
(1)(2)
(Fig. 1)
Peak pulse current with a 10/1000 µs waveform
(1)
Power dissipation on infinite heatsink T
A
= 50 °C ,
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
(2)
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
T
J
, T
STG
VALUE
600
See next table
5.0
100
- 65 to + 150
UNIT
W
A
W
A
°C
Document Number: 88370
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
P6SMB Series
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
GENERAL
SEMICONDUCTOR
PART NUMBER
P6SMB6.8A
P6SMB7.5A
P6SMB8.2A
P6SMB9.1A
P6SMB10A
P6SMB11A
P6SMB12A
P6SMB13A
P6SMB15A
P6SMB16A
P6SMB18A
P6SMB20A
P6SMB22A
P6SMB24A
P6SMB27A
P6SMB30A
P6SMB33A
P6SMB36A
P6SMB39A
P6SMB43A
P6SMB47A
P6SMB51A
P6SMB56A
P6SMB62A
P6SMB68A
P6SMB75A
P6SMB82A
P6SMB91A
P6SMB100A
P6SMB110A
P6SMB120A
P6SMB130A
P6SMB150A
P6SMB160A
P6SMB170A
P6SMB180A
P6SMB200A
P6SMB220A
P6SMB250A
P6SMB300A
P6SMB350A
P6SMB400A
P6SMB440A
P6SMB480A
P6SMB510A
P6SMB540A
DEVICE
MARKING
CODE
UNI
6V8A
7V5A
8V2A
9V1A
10A
11A
12A
13A
15A
16A
18A
20A
22A
24A
27A
30A
33A
36A
39A
43A
47A
51A
56A
62A
68A
75A
82A
91A
100A
110A
120A
130A
150A
160A
170A
180A
200A
220A
250A
300A
350A
400A
440A
480A
510A
540A
BI
6V8C
7V5C
8V2C
9V1C
10C
11C
12C
13C
15C
16C
18C
20C
22C
24C
27C
30C
33C
36C
39C
43C
47C
51C
56C
62C
68C
75C
82C
91C
100C
110C
120C
130C
150C
160C
170C
180C
200C
220C
-
-
-
-
-
-
-
-
BREAKDOWN
VOLTAGE
V
BR
AT I
T (1)
(V)
MIN.
6.45
7.13
7.79
8.65
9.50
10.5
11.4
12.4
14.3
15.2
17.1
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95.0
105
114
124
143
152
162
171
190
209
237
285
333
380
418
456
485
513
MAX.
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21.0
23.1
25.2
28.4
31.5
34.7
37.8
41.0
45.2
49.4
53.6
58.8
65.1
71.4
78.8
86.1
95.5
105
116
126
137
158
168
179
189
210
231
263
315
368
420
462
504
535
567
TEST
STAND-OFF
CURRENT VOLTAGE
I
T
V
WM
(mA)
(V)
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.80
6.40
7.02
7.78
8.55
9.40
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53.0
58.1
64.1
70.1
77.8
85.5
94.0
102
111
128
136
145
154
171
185
214
256
300
342
376
408
434
459
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D (3)
(µA)
1000
500
200
50
10
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK
PULSE
CURRENT
I
PPM (2)
(A)
57.1
53.1
49.6
44.8
41.4
38.5
35.9
33.0
28.3
26.7
23.8
21.7
19.6
18.1
16.0
14.5
13.1
12.0
11.1
10.1
9.3
8.6
7.8
7.1
6.5
5.8
5.3
4.8
4.4
3.9
3.6
3.4
2.9
2.7
2.6
2.4
2.2
1.8
1.74
1.45
1.24
1.10
1.00
0.91
0.86
0.81
MAXIMUM
CLAMPING
VOLTAGE
AT I
PPM
V
C
(V)
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77.0
85.0
92.0
103
113
125
137
152
165
179
207
219
234
246
274
328
344
414
482
548
602
658
698
740
MAXIMUM
TEMP.
COEFFICIENT
OF V
BR
(%/°C)
0.057
0.061
0.065
0.068
0.073
0.075
0.078
0.081
0.084
0.086
0.088
0.090
0.092
0.094
0.096
0.097
0.098
0.099
0.100
0.101
0.101
0.102
0.103
0.104
0.104
0.105
0.105
0.106
0.106
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
Notes:
(1) Pulse test: t
p
≤
50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types with V
WM
of 10 V and less, the I
D
limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) V
F
= 3 V at I
F
= 50 A (uni-directional only)
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88370
Revision: 21-Oct-08
P6SMB Series
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Thermal resistance, junction to ambient air
Thermal resistance, junction to leads
Note:
(1) Mounted on minimum recommended pad layout
(1)
SYMBOL
R
θJA
R
θJL
VALUE
100
20
UNIT
°C/W
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
P6SMB6.8A-E3/52
P6SMB6.8A-E3/5B
P6SMB6.8AHE3/52
(1)
P6SMB6.8AHE3/5B
(1)
Note:
(1) Automotive grade AEC Q101 qualified
UNIT WEIGHT (g)
0.096
0.096
0.096
0.096
PREFERRED PACKAGE CODE
52
5B
52
5B
BASE QUANTITY
750
3200
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
°C
unless otherwise noted)
100
150
I
PPM
- Peak Pulse Current,
%
I
RSM
P
PPM
- Peak Pulse Power (kW)
t
r
= 10
µs
Peak
Value
I
PPM
10
T
J
= 25 °C
Pulse
Width
(t
d
)
is defined as the Point
where
the Peak Current
decays to 50
%
of I
PPM
100
Half
Value
- I
PP
I
PPM
2
50
10/1000
µs Waveform
as defined
by
R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
1
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1
µs
1.0
µs
10
µs
100
µs
1.0 ms
10 ms
t
d
- Pulse
Width
(s)
t - Time (ms)
Figure 1. Peak Pulse Power Rating Curve
Figure 3. Pulse Waveform
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage,
%
100
6000
75
C
J
- Junction Capacitance (pF)
Measured at
Zero Bias
1000
50
100
V
R
, Measured at
Stand-Off
Voltage V
WM
25
Uni-Directional
Bi-Directional
10
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
100
200
0
0
25
50
75
100
125
150
175
200
1
10
T
J
- Initial Temperature (°C)
V
WM
- Reverse Stand-Off
Voltage
(V)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 4. Typical Junction Capacitance
Document Number: 88370
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
P6SMB Series
Vishay General Semiconductor
100
200
Transient Thermal Impedance (°C/W)
Peak Forward Surge Current (A)
8.3
ms Single Half Sine-Wave
Uni-Directional Only
100
10
1.0
0.1
0.001
10
0.01
0.1
1
10
100
1000
1
10
100
t
p
- Pulse Duration (s)
Number
of Cycles at 60 Hz
Figure 5. Typical Transient Thermal Impedance
Figure 6. Maximum Non-Repetitive Peak Forward Surge Current
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AA (SMB)
Cathode Band
0.085 (2.159)
MAX.
Mounting Pad Layout
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.220 REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88370
Revision: 21-Oct-08
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000