BYV96DP datasheet, PDF - EEWORLD Datasheet

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BYV96DP: DescriptionRectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size45KB，1 Pages; ManufacturerEIC [EIC discrete Semiconductors]; Environmental Compliance

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BYV96DP Overview

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon,

BYV96DP Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	EIC [EIC discrete Semiconductors]
package instruction	O-PALF-W2
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
application	FAST RECOVERY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.6 V
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	35 A
Number of components	1
Phase	1
Number of terminals	2
Maximum output current	1.5 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	800 V
Maximum reverse current	5 µA
Maximum reverse recovery time	0.3 µs
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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Description	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon,	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD,	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD,	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD,	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon,	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon,	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 200V V(RRM), Silicon,	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 400V V(RRM), Silicon,	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD,
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]
package instruction	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
application	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.6 V	1.5 V	1.5 V	1.5 V	1.6 V	1.6 V	1.6 V	1.6 V	1.5 V	1.5 V
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	35 A	70 A	70 A	70 A	35 A	35 A	35 A	35 A	70 A	70 A
Number of components	1	1	1	1	1	1	1	1	1	1
Phase	1	1	1	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2	2	2	2
Maximum output current	1.5 A	3 A	3 A	3 A	1.5 A	1.5 A	1.5 A	1.5 A	3 A	3 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	800 V	400 V	600 V	200 V	600 V	1000 V	200 V	400 V	800 V	1000 V
Maximum reverse current	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA
Maximum reverse recovery time	0.3 µs	0.25 µs	0.25 µs	0.25 µs	0.25 µs	0.3 µs	0.25 µs	0.25 µs	0.3 µs	0.3 µs
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
technology	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Base Number Matches	1	1	1	1	1	1	-	-	-	-

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