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R325CH06FH0

Description
Silicon Controlled Rectifier, 1520000mA I(T), 600V V(DRM)
CategoryAnalog mixed-signal IC    Trigger device   
File Size282KB,12 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

R325CH06FH0 Overview

Silicon Controlled Rectifier, 1520000mA I(T), 600V V(DRM)

R325CH06FH0 Parametric

Parameter NameAttribute value
MakerIXYS
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Nominal circuit commutation break time30 µs
Critical rise rate of minimum off-state voltage200 V/us
Maximum DC gate trigger current300 mA
Maximum DC gate trigger voltage3 V
Maximum holding current1000 mA
Maximum leakage current100 mA
On-state non-repetitive peak current17000 A
Maximum on-state current1520000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage600 V
surface mountNO
Trigger device typeSCR
Base Number Matches1
WESTCODE
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
Date:- 21 Dec, 2000
Data Sheet Issue:- 1
Distributed Gate Thyristor
Types R325CH02 to R325CH14
MAXIMUM
LIMITS
200-1400
200-1400
200-1400
300-1500
UNITS
V
V
V
V
OTHER RATINGS
I
T(AV)
I
T(AV)
I
T(AV)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
It
It
di
T
/dt
V
RGM
P
G(AV)
P
GM
V
GD
T
HS
T
stg
2
2
MAXIMUM
LIMITS
1178
767
433
2395
892
17
18.7
1.45×10
1.75×10
1000
1500
5
2
30
0.25
-40 to +125
-40 to +150
6
6
UNITS
A
A
A
A
A
kA
kA
As
As
A/µs
A/µs
V
W
W
V
°C
°C
2
2
Mean on-state current, T
sink
=55°C, (note 2)
Mean on-state current. T
sink
=85°C, (note 2)
Mean on-state current. T
sink
=85°C, (note 3)
Nominal RMS on-state current, T
sink
=25°C, (note 2)
D.C. on-state current, T
sink
=25°C, (note 4)
Peak non-repetitive surge t
p
=10ms, V
RM
=0.6V
RRM
, (note 5)
Peak non-repetitive surge t
p
=10ms, V
RM
≤10V,
(note 5)
I t capacity for fusing t
p
=10ms, V
RM
=0.6V
RRM
, (note 5)
I t capacity for fusing t
p
=10ms, V
RM
≤10V,
(note 5)
2
2
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C T
j
initial.
6)
V
D
=67% V
DRM
, I
FG
=2A, t
r
≤0.5µs,
T
case
=125°C.
7)
Rated V
DRM
.
Data Sheet. Types R325CH02 to R325CH14 Issue 1
Page 1 of 12
December, 2000
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