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BC846UE6327

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size845KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BC846UE6327 Overview

Transistor

BC846UE6327 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)200
Humidity sensitivity level1
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
surface mountYES
Base Number Matches1
BC846S/ BC846U/ BC847S
NPN Silicon AF Transistor Arrays
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Two (galvanic) internal isolated transistors
with good matching in one package
BC846S / U, BC847S: For orientation in reel see
package information below
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BC846S
BC846U
BC847S
C1
6
B2
5
E2
4
TR2
TR1
1
E1
2
B1
3
C2
EHA07178
Type
BC846S
BC846U
BC847S
Marking
1Ds
1Ds
1Cs
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1
2012-04-04

BC846UE6327 Related Products

BC846UE6327 BC847SE6433 BC847SE6327 BC847SH6827
Description Transistor Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-6
Is it Rohs certified? conform to conform to conform to conform to
Maker Infineon Infineon Infineon Infineon
Reach Compliance Code compliant compliant compliant compli
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Minimum DC current gain (hFE) 200 110 110 200
Polarity/channel type NPN NPN NPN NPN
surface mount YES YES YES YES
Humidity sensitivity level 1 1 1 -
Maximum operating temperature 150 °C 150 °C 150 °C -
Maximum power dissipation(Abs) 0.25 W 0.25 W 0.25 W -
package instruction - SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Collector-emitter maximum voltage - 45 V 45 V 45 V
Configuration - SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
JESD-30 code - R-PDSO-G6 R-PDSO-G6 R-PDSO-G6
Number of components - 2 2 2
Number of terminals - 6 6 6
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 260 260 NOT SPECIFIED
Terminal form - GULL WING GULL WING GULL WING
Terminal location - DUAL DUAL DUAL
Maximum time at peak reflow temperature - 40 40 NOT SPECIFIED
transistor applications - SWITCHING SWITCHING AMPLIFIER
Transistor component materials - SILICON SILICON SILICON
Nominal transition frequency (fT) - 250 MHz 250 MHz 250 MHz

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