BC847SE6327 datasheet, PDF - EEWORLD Datasheet

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BC847SE6327: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon,; CategoryDiscrete semiconductor The transistor; File Size845KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BC847SE6327 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon,

BC847SE6327 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	45 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	110
JESD-30 code	R-PDSO-G6
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.25 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz

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BC846S/ BC846U/ BC847S

NPN Silicon AF Transistor Arrays

•

For AF input stages and driver applications

•

High current gain

•

Low collector-emitter saturation voltage

•

Two (galvanic) internal isolated transistors

with good matching in one package

•

BC846S / U, BC847S: For orientation in reel see

package information below

•

Pb-free (RoHS compliant) package

•

Qualified according AEC Q101

BC846S

BC846U

BC847S

TR2

TR1

EHA07178

Type

BC846S

BC846U

BC847S

Marking

1Ds

1Cs

Pin Configuration

Package

1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74

1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

2012-04-04

BC847SE6327 Related Products

	BC847SE6327	BC847SE6433	BC846UE6327	BC847SH6827
Description	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon	Transistor	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-6
Is it Rohs certified?	conform to	conform to	conform to	conform to
Maker	Infineon	Infineon	Infineon	Infineon
Reach Compliance Code	compliant	compliant	compliant	compli
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A
Minimum DC current gain (hFE)	110	110	200	200
Polarity/channel type	NPN	NPN	NPN	NPN
surface mount	YES	YES	YES	YES
package instruction	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	-	SMALL OUTLINE, R-PDSO-G6
Collector-emitter maximum voltage	45 V	45 V	-	45 V
Configuration	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	-	SEPARATE, 2 ELEMENTS
JESD-30 code	R-PDSO-G6	R-PDSO-G6	-	R-PDSO-G6
Humidity sensitivity level	1	1	1	-
Number of components	2	2	-	2
Number of terminals	6	6	-	6
Maximum operating temperature	150 °C	150 °C	150 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	-	NOT SPECIFIED
Maximum power dissipation(Abs)	0.25 W	0.25 W	0.25 W	-
Terminal form	GULL WING	GULL WING	-	GULL WING
Terminal location	DUAL	DUAL	-	DUAL
Maximum time at peak reflow temperature	40	40	-	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	-	AMPLIFIER
Transistor component materials	SILICON	SILICON	-	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	-	250 MHz

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