933812320115 datasheet, PDF - EEWORLD Datasheet

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933812320115: DescriptionDIODE 0.6 A, 1000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, 100H03, 2 PIN, Signal Diode; CategoryDiscrete semiconductor diode; File Size102KB，14 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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933812320115 Overview

DIODE 0.6 A, 1000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, 100H03, 2 PIN, Signal Diode

933812320115 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
package instruction	O-LELF-R2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-LELF-R2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	0.6 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Guideline	IEC-134
Maximum repetitive peak reverse voltage	1000 V
Maximum reverse recovery time	0.3 µs
surface mount	YES
technology	AVALANCHE
Terminal form	WRAP AROUND
Terminal location	END
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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Description	DIODE 0.6 A, 1000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, 100H03, 2 PIN, Signal Diode	DIODE 0.6 A, 800 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, 100H03, 2 PIN, Signal Diode	DIODE 0.6 A, 1000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, 100H03, 2 PIN, Signal Diode	DIODE 0.6 A, 400 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, 100H03, 2 PIN, Signal Diode	DIODE 0.6 A, 400 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, 100H03, 2 PIN, Signal Diode	DIODE 0.6 A, 800 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, 100H03, 2 PIN, Signal Diode	DIODE 0.6 A, 200 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, 100H03, 2 PIN, Signal Diode	DIODE 0.6 A, 600 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, 100H03, 2 PIN, Signal Diode	DIODE 0.6 A, 600 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, 100H03, 2 PIN, Signal Diode	DIODE 0.6 A, 200 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, 100H03, 2 PIN, Signal Diode
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
package instruction	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2
Contacts	2	2	2	2	2	2	2	2	2	2
Reach Compliance Code	unknown	unknow	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2
Number of components	1	1	1	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A
Package body material	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Guideline	IEC-134	IEC-134	IEC-134	IEC-134	IEC-134	IEC-134	IEC-134	IEC-134	IEC-134	IEC-134
Maximum repetitive peak reverse voltage	1000 V	800 V	1000 V	400 V	400 V	800 V	200 V	600 V	600 V	200 V
Maximum reverse recovery time	0.3 µs	0.3 µs	0.3 µs	0.25 µs	0.25 µs	0.3 µs	0.25 µs	0.25 µs	0.25 µs	0.25 µs
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
Terminal form	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND
Terminal location	END	END	END	END	END	END	END	END	END	END
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maker	NXP	-	NXP	NXP	NXP	NXP	NXP	NXP	NXP	NXP
Base Number Matches	1	1	1	1	1	1	-	-	-	1

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