MXSMBJ170CAE3TR datasheet, PDF

MXSMBJ170CAE3TR: Description600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2; CategoryDiscrete semiconductor diode; File Size204KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com; Environmental Compliance

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MXSMBJ170CAE3TR Overview

600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Microsemi
Parts packaging code	DO-214AA
package instruction	R-PDSO-C2
Contacts	2
Reach Compliance Code	unknown
Is Samacsys	N
Maximum breakdown voltage	209 V
Minimum breakdown voltage	189 V
Breakdown voltage nominal value	199 V
Maximum clamping voltage	275 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AA
JESD-30 code	R-PDSO-C2
JESD-609 code	e3
Maximum non-repetitive peak reverse power dissipation	600 W
Number of components	1
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
polarity	BIDIRECTIONAL
Maximum power dissipation	1.38 W
Certification status	Not Qualified
Guideline	MIL-19500
Maximum repetitive peak reverse voltage	170 V
surface mount	YES
technology	AVALANCHE
Terminal surface	MATTE TIN
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	40
Base Number Matches	1

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