NESG3033M14-A datasheet, PDF - EEWORLD Datasheet

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NESG3033M14-A: DescriptionRF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size127KB，15 Pages; ManufacturerNEC Electronics; Environmental Compliance

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NESG3033M14-A Overview

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN

NESG3033M14-A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NEC Electronics
package instruction	SMALL OUTLINE, R-PDSO-F4
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.035 A
Collector-based maximum capacity	0.25 pF
Collector-emitter maximum voltage	4.3 V
Configuration	SINGLE
highest frequency band	L BAND
JESD-30 code	R-PDSO-F4
JESD-609 code	e6
Number of components	1
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN BISMUTH
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON GERMANIUM

NESG3033M14-A Related Products

	NESG3033M14-A	NESG3033M14-FB	NESG3033M14-T3FB	NESG3033M14	NESG3033M14-T3-A	NESG3033M14-T3	NESG3033M14-AFB	NESG3033M14-T3-AFB
Description	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN
Is it Rohs certified?	conform to	incompatible	incompatible	incompatible	conform to	incompatible	incompatible	incompatible
Maker	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics
package instruction	SMALL OUTLINE, R-PDSO-F4	SMALL OUTLINE, R-PDSO-F4	LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN	LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN	LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN	LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN	LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN	LEAD FREE, LEADLESS, MINIMOLD, M14, 1208, 4 PIN
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
Maximum collector current (IC)	0.035 A	0.035 A	0.035 A	0.035 A	0.035 A	0.035 A	0.035 A	0.035 A
Collector-based maximum capacity	0.25 pF	0.25 pF	0.25 pF	0.25 pF	0.25 pF	0.25 pF	0.25 pF	0.25 pF
Collector-emitter maximum voltage	4.3 V	4.3 V	4.3 V	4.3 V	4.3 V	4.3 V	4.3 V	4.3 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
highest frequency band	L BAND	L BAND	L BAND	L BAND	L BAND	L BAND	L BAND	L BAND
JESD-30 code	R-PDSO-F4	R-PDSO-F4	R-PDSO-F4	R-PDSO-F4	R-PDSO-F4	R-PDSO-F4	R-PDSO-F4	R-PDSO-F4
JESD-609 code	e6	e0	e0	e0	e3/e6	e0	e0	e0
Number of components	1	1	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4	4	4
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
Terminal surface	TIN BISMUTH	TIN LEAD	TIN LEAD	TIN LEAD	MATTE TIN/TIN BISMUTH	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON GERMANIUM	SILICON GERMANIUM	SILICON GERMANIUM	SILICON GERMANIUM	SILICON GERMANIUM	SILICON GERMANIUM	SILICON GERMANIUM	SILICON GERMANIUM

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