EEWORLDEEWORLDEEWORLD

Part Number

Search

M29F002BNT45K6F

Description
256KX8 FLASH 5V PROM, 45ns, PQCC32, LEAD FREE, PLASTIC, LCC-32
Categorystorage    storage   
File Size445KB,21 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric View All

M29F002BNT45K6F Overview

256KX8 FLASH 5V PROM, 45ns, PQCC32, LEAD FREE, PLASTIC, LCC-32

M29F002BNT45K6F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeQFJ
package instructionLEAD FREE, PLASTIC, LCC-32
Contacts32
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Maximum access time45 ns
Other featuresTOP BOOT BLOCK
startup blockTOP
command user interfaceYES
Data pollingYES
Durability100000 Write/Erase Cycles
JESD-30 codeR-PQCC-J32
length13.97 mm
memory density2097152 bit
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size1,2,1,3
Number of terminals32
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX8
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC32,.5X.6
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height3.56 mm
Department size16K,8K,32K,64K
Maximum standby current0.0001 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
typeNOR TYPE
width11.43 mm
Base Number Matches1
M29F002BT, M29F002BNT
M29F002BB, M29F002BNB
2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory
SINGLE 5V ± 10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 45 ns
PROGRAMMING TIME
– 8 µs by Byte typical
7 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 4 Main Blocks
PLCC32 (K)
TSOP32 (N)
(8 x 20mm)
PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION
MODE
LOW POWER CONSUMPTION
– Standby and Automatic Standby
Figure 1. Logic Diagram
VCC
18
A0-A17
W
E
G
RP
M29F002BT
M29F002BB
M29F002BNT
M29F002BNB
8
DQ0-DQ7
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code M29F002BT: B0h
– Top Device Code M29F002BNT: B0h
– Bottom Device Code M29F002BB: 34h
– Bottom Device Code M29F002BNB: 34h
ECOPACK
®
PACKAGES AVAILABLE
VSS
AI02957B
September 2005
1/21
7V boost to 12V circuit
There are two ways of thinking: 1. Connect two 7V/1A battery panels in parallel to become a 7V/2A power supply, and then get 12V by 7V to 12V boost; 2. Connect two 7V/1A battery panels in series to ge...
Aguilera Analogue and Mixed Signal
EEWORLD University ---- 3D TOF occupancy detection: body tracking and counting
3D TOF Occupancy Detection: Body Tracking and Counting : https://training.eeworld.com.cn/course/4988...
wanglan123 Talking
Exploring the secrets of mobile phone power management technology
As mobile phones have more and more functions, users' energy demands for mobile phone batteries are also increasing. Existing lithium-ion batteries have become increasingly difficult to meet consumers...
zbz0529 Power technology
[LSM6DSOX finite state machine routine learning four] --4D detection (FourD position recognition)
The previous article has introduced the ST official LSM6DSOX example library file structure and the introduction of each file in detail. At the end, there is a simple question: if the direction of the...
justd0 ST MEMS Sensor Creative Design Competition
[Silicon Labs Development Kit Review] + Temperature and Humidity Sensor Si7021
The temperature and humidity integrated digital sensor Si7021 used in our development kit has an I2C interface . The I2C interface sensors on the development board are all mounted on one bus.The bus i...
anger0925 Development Kits Review Area
Smart socket
PD3.0 and QC3.0; total power 120W. One fast charger and two QC3.0 fast chargers at the same time without interference, both are fast chargers, those who are capable can contact me. Payment method, the...
shendajun Buy&Sell

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号