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MX29L1611MC-10

Description
16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
Categorystorage    storage   
File Size466KB,39 Pages
ManufacturerMacronix
Websitehttp://www.macronix.com/en-us/Pages/default.aspx
Download Datasheet Parametric Compare View All

MX29L1611MC-10 Overview

16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM

MX29L1611MC-10 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMacronix
Parts packaging codeSOIC
package instructionSOP, SOP44,.63
Contacts44
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time100 ns
Spare memory width8
command user interfaceYES
Data pollingNO
JESD-30 codeR-PDSO-G44
JESD-609 codee0
length28.5 mm
memory density16777216 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size32
Number of terminals44
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX16
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP44,.63
Package shapeRECTANGULAR
Package formSMALL OUTLINE
page size64/128 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height3 mm
Department size64K
Maximum standby current0.00005 A
Maximum slew rate0.08 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeNOR TYPE
width12.6 mm
Base Number Matches1
PRELIMINARY
MX29L1611
16M-BIT [2M x 8/1M x 16] CMOS
SINGLE VOLTAGE PAGEMODE FLASH EEPROM
FEATURES
• Regulated voltage range 3.0 to 3.6V write, erase and
read(MX29L1611-75/10/12)
• Fast random access/page mode access time: 75/
30ns, 100/30ns, 120/30ns.
• Full voltage range 2.7 to 3.6V write, erase and read
(MX29L1611-90)
• Fast random access/page mode access time: 90/
35ns
• Endurance: 10,000 cycles
• Page access depth: 16 bytes/8 words, page address
A0, A1, A2
• Sector erase architecture
- 32 equal sectors of 64k bytes each
- Sector erase time: 200ms typical
• Auto Erase and Auto Program Algorithms
- Automatically erases any one of the sectors or the
whole chip with Erase Suspend capability
- Automatically programs and verifies data at specified
addresses
Status Register feature for detection of program or
erase cycle completion
Low VCC write inhibit < 1.8V
Software and hardware data protection
Page program operation
- Internal address and data latches for 128 bytes/64
words per page
- Page programming time: 5ms typical
Low power dissipation
- 50mA active current
- 20uA standby current
Two independently Protected sectors
Industry standard surface mount packaging
- 44 lead SOP, 48 TSOP(I)
GENERAL DESCRIPTION
The MX29L1611 is a 16-mega bit pagemode Flash
memory organized as either 1M wordx16 or 2M bytex8.
The MX29L1611 includes 32 sectors of 64KB(65,536
Bytes or 32,768 words). MXIC's Flash memories offer
the most cost-effective and reliable read/write non-
volatile random access memory and fast page mode
access. The MX29L1611 is packaged 44-pin SOP and
48-TSOP(I). It is designed to be reprogrammed and
erased in-system or in-standard EPROM programmers.
The standard MX29L1611 offers access times as fast as
100ns,allowing operation of high-speed microprocessors
without wait. To eliminate bus contention, the MX29L1611
has separate chip enable CE, output enable (OE), and
write enable (WE) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29L1611 uses a command register to manage this
functionality.
To allow for simple in-system reprogrammability, the
MX29L1611 does not require high input voltages for
programming. Three-volt-only commands determine
the operation of the device. Reading data out of the
device is similar to reading from an EPROM.
MXIC Flash technology reliably stores memory contents
even after 10,000 cycles. The MXIC's cell is designed
to optimize the erase and programming mechanisms. In
addition, the combination of advanced tunnel oxide
processing and low internal electric fields for erase and
programming operations produces reliable cycling. The
MX29L1611 uses a 2.7V~3.6V VCC supply to perform
the Auto Erase and Auto Program algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up
protection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC +1V.
P/N:PM0511
REV. 2.4, NOV. 06, 2001
1

MX29L1611MC-10 Related Products

MX29L1611MC-10 MX29L1611TC-90 MX29L1611TC-75 MX29L1611TC-12 MX29L1611TC-10 MX29L1611MC-90 MX29L1611MC-75 MX29L1611MC-12 MX29L1611
Description 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible -
Maker Macronix Macronix Macronix Macronix Macronix Macronix Macronix Macronix -
Parts packaging code SOIC TSOP1 TSOP1 TSOP1 TSOP1 SOIC SOIC SOIC -
package instruction SOP, SOP44,.63 TSOP1, TSSOP48,.8,20 TSOP1, TSSOP48,.8,20 TSOP1, TSSOP48,.8,20 TSOP1, TSSOP48,.8,20 SOP, SOP44,.63 SOP, SOP44,.63 SOP, SOP44,.63 -
Contacts 44 48 48 48 48 44 44 44 -
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown -
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 -
Maximum access time 100 ns 90 ns 75 ns 120 ns 100 ns 90 ns 75 ns 120 ns -
Spare memory width 8 8 8 8 8 8 8 8 -
command user interface YES YES YES YES YES YES YES YES -
Data polling NO NO NO NO NO NO NO NO -
JESD-30 code R-PDSO-G44 R-PDSO-G48 R-PDSO-G48 R-PDSO-G48 R-PDSO-G48 R-PDSO-G44 R-PDSO-G44 R-PDSO-G44 -
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0 -
length 28.5 mm 18.4 mm 18.4 mm 18.4 mm 18.4 mm 28.5 mm 28.5 mm 28.5 mm -
memory density 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit -
Memory IC Type FLASH FLASH FLASH FLASH FLASH FLASH FLASH FLASH -
memory width 16 16 16 16 16 16 16 16 -
Number of functions 1 1 1 1 1 1 1 1 -
Number of departments/size 32 32 32 32 32 32 32 32 -
Number of terminals 44 48 48 48 48 44 44 44 -
word count 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words -
character code 1000000 1000000 1000000 1000000 1000000 1000000 1000000 1000000 -
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS -
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C -
organize 1MX16 1MX16 1MX16 1MX16 1MX16 1MX16 1MX16 1MX16 -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
encapsulated code SOP TSOP1 TSOP1 TSOP1 TSOP1 SOP SOP SOP -
Encapsulate equivalent code SOP44,.63 TSSOP48,.8,20 TSSOP48,.8,20 TSSOP48,.8,20 TSSOP48,.8,20 SOP44,.63 SOP44,.63 SOP44,.63 -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE -
page size 64/128 words 64/128 words 64/128 words 64/128 words 64/128 words 64/128 words 64/128 words 64/128 words -
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
power supply 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V -
Programming voltage 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V -
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
Maximum seat height 3 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 3 mm 3 mm 3 mm -
Department size 64K 64K 64K 64K 64K 64K 64K 64K -
Maximum standby current 0.00005 A 0.00005 A 0.00005 A 0.00005 A 0.00005 A 0.00005 A 0.00005 A 0.00005 A -
Maximum slew rate 0.08 mA 0.08 mA 0.08 mA 0.08 mA 0.08 mA 0.08 mA 0.08 mA 0.08 mA -
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V -
Minimum supply voltage (Vsup) 3 V 2.7 V 3 V 3 V 3 V 2.7 V 3 V 3 V -
Nominal supply voltage (Vsup) 3.3 V 3 V 3.3 V 3.3 V 3.3 V 3 V 3.3 V 3.3 V -
surface mount YES YES YES YES YES YES YES YES -
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS -
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING -
Terminal pitch 1.27 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 1.27 mm 1.27 mm 1.27 mm -
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
switch bit NO NO NO NO NO NO NO NO -
type NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE -
width 12.6 mm 12 mm 12 mm 12 mm 12 mm 12.6 mm 12.6 mm 12.6 mm -
Base Number Matches 1 1 1 1 1 1 - 1 -
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