PRELIMINARY
MX29L1611
16M-BIT [2M x 8/1M x 16] CMOS
SINGLE VOLTAGE PAGEMODE FLASH EEPROM
FEATURES
• Regulated voltage range 3.0 to 3.6V write, erase and
read(MX29L1611-75/10/12)
• Fast random access/page mode access time: 75/
30ns, 100/30ns, 120/30ns.
• Full voltage range 2.7 to 3.6V write, erase and read
(MX29L1611-90)
• Fast random access/page mode access time: 90/
35ns
• Endurance: 10,000 cycles
• Page access depth: 16 bytes/8 words, page address
A0, A1, A2
• Sector erase architecture
- 32 equal sectors of 64k bytes each
- Sector erase time: 200ms typical
• Auto Erase and Auto Program Algorithms
- Automatically erases any one of the sectors or the
whole chip with Erase Suspend capability
- Automatically programs and verifies data at specified
addresses
Status Register feature for detection of program or
erase cycle completion
Low VCC write inhibit < 1.8V
Software and hardware data protection
Page program operation
- Internal address and data latches for 128 bytes/64
words per page
- Page programming time: 5ms typical
Low power dissipation
- 50mA active current
- 20uA standby current
Two independently Protected sectors
Industry standard surface mount packaging
- 44 lead SOP, 48 TSOP(I)
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GENERAL DESCRIPTION
The MX29L1611 is a 16-mega bit pagemode Flash
memory organized as either 1M wordx16 or 2M bytex8.
The MX29L1611 includes 32 sectors of 64KB(65,536
Bytes or 32,768 words). MXIC's Flash memories offer
the most cost-effective and reliable read/write non-
volatile random access memory and fast page mode
access. The MX29L1611 is packaged 44-pin SOP and
48-TSOP(I). It is designed to be reprogrammed and
erased in-system or in-standard EPROM programmers.
The standard MX29L1611 offers access times as fast as
100ns,allowing operation of high-speed microprocessors
without wait. To eliminate bus contention, the MX29L1611
has separate chip enable CE, output enable (OE), and
write enable (WE) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29L1611 uses a command register to manage this
functionality.
To allow for simple in-system reprogrammability, the
MX29L1611 does not require high input voltages for
programming. Three-volt-only commands determine
the operation of the device. Reading data out of the
device is similar to reading from an EPROM.
MXIC Flash technology reliably stores memory contents
even after 10,000 cycles. The MXIC's cell is designed
to optimize the erase and programming mechanisms. In
addition, the combination of advanced tunnel oxide
processing and low internal electric fields for erase and
programming operations produces reliable cycling. The
MX29L1611 uses a 2.7V~3.6V VCC supply to perform
the Auto Erase and Auto Program algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up
protection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC +1V.
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MX29L1611
Table1.PIN DESCRIPTIONS
SYMBOL
A0 - A19
Q0 - Q7
TYPE
INPUT
INPUT/OUTPUT
NAME AND FUNCTION
ADDRESS INPUTS: for memory addresses. Addresses are internally
latched during a write cycle.
LOW-BYTE DATA BUS: Input data and commands during Command Interface
Register(CIR) write cycles. Outputs array,status and identifier data in the
appropriate read mode. Floated when the chip is de-selected or the outputs
are disabled.
Q8 - Q14
INPUT/OUTPUT
HIGH-BYTE DATA BUS: Inputs data during x 16 Data-Write operations.
Outputs array, identifier data in the appropriate read mode; not used for status
register reads. Floated when the chip is de-selected or the outputs are
disabled
Selects between high-byte data INPUT/OUTPUT(BYTE = HIGH) and LSB
ADDRESS(BYTE = LOW)
CHIP ENABLE INPUTS: Activate the device's control logic, Input buffers,
decoders and sense amplifiers. With CE high, the device is deselected and
power consumption reduces to Standby level upon completion of any current
program or erase operations. CE must be low to select the device.
OUTPUT ENABLES: Gates the device's data through the output buffers
during a read cycle OE is active low.
WRITE ENABLE: Controls writes to the Command Interface Register(CIR).
WE is active low.
WRITE PROTECT: Top or Bottom sector can be protected by writing a non-
volatile protect-bit for each sector. When WP is high, all sectors can be
programmed or erased regardless of the state of the protect-bits.
BYTE ENABLE: BYTE Low places device in x8 mode. All data is then input
or output on Q0-7 and Q8-14 float. AddressQ15/A-1 selects between the high
and low byte. BYTE high places the device in x16 mode, and turns off the Q15/
A-1 input buffer. Address A0, then becomes the lowest order address.
DEVICE POWER SUPPLY(3.0V~3.6V for MX29L1611-75/10/12 ; 2.7V~3.6V
for MX29L1611-90)
GROUND
Q15/A -1
CE
INPUT/OUTPUT
INPUT
OE
WE
WP
INPUT
INPUT
INPUT
BYTE
INPUT
VCC
GND
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MX29L1611
BUS OPERATION
Flash memory reads, erases and writes in-system via the local CPU . All bus cycles to or from the flash memory
conform to standard microprocessor bus cycles.
Table 2.1 Bus Operations for Word-Wide Mode (BYTE = VIH)
Mode
Read
Output Disable
Standby
Manufacturer ID
Device ID
Write
Notes
1
1
1
2,4
2,4
1,3
CE
VIL
VIL
VIH
VIL
VIL
VIL
OE
VIL
VIH
X
VIL
VIL
VIH
WE
VIH
VIH
X
VIH
VIH
VIL
A0
X
X
X
VIL
VIH
X
A1
X
X
X
VIL
VIL
X
A9
X
X
X
VID
VID
X
Q0-Q7
DOUT
High Z
High Z
C2H
F8H
DIN
Q8-Q14
DOUT
High Z
HIgh Z
00H
00H
DIN
Q15/A-1
DOUT
HighZ
HighZ
0B
0B
DIN
Table2.2 Bus Operations for Byte-Wide Mode (BYTE = VIL)
Mode
Read
Output Disable
Standby
Manufacturer ID
Device ID
Write
Notes
1
1
1
2,4
2,4
1,3
CE
VIL
VIL
VIH
VIL
VIL
VIL
OE
VIL
VIH
X
VIL
VIL
VIH
WE
VIH
VIH
X
VIH
VIH
VIL
A0
X
X
X
VIL
VIH
X
A1
X
X
X
VIL
VIL
X
A9
X
X
X
VID
VID
X
Q0-Q7
DOUT
High Z
High Z
C2H
F8H
DIN
Q8-Q14
HighZ
High Z
HIgh Z
High Z
High Z
High Z
Q15/A-1
VIL/VIH
X
X
VIL
VIL
VIL/VIH
NOTES :
1. X can be VIH or VIL for address or control pins.
2. A0 and A1 at VIL provide manufacturer ID codes. A0 at VIH and A1 at VIL provide device ID codes. A0 at VIL, A1 at VIH and
with appropriate sector addresses provide Sector Protect Code.(Refer to Table 4)
3. Commands for different Erase operations, Data program operations or Sector Protect operations can only be successfully
completed through proper command sequence.
4. VID = 11.5V- 12.5V.
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