NAND01GR4B datasheet, PDF - EEWORLD Datasheet

NAND01GR4B: Description128M X 8 FLASH 3V PROM, 35 ns, PDSO48; Categorystorage; File Size402KB，64 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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NAND01GR4B Overview

128M X 8 FLASH 3V PROM, 35 ns, PDSO48

Parameter Name	Attribute value
Number of functions	1
Number of terminals	48
Minimum operating temperature	-40 Cel
Maximum operating temperature	85 Cel
Rated supply voltage	3 V
Minimum supply/operating voltage	2.7 V
Maximum supply/operating voltage	3.6 V
Processing package description	12 X 20 MM, PLASTIC, TSOP-48
state	Contact Mfr
ccess_time_max	35 ns
jesd_30_code	R-PDSO-G48
jesd_609_code	e0
storage density	1.02E9 bit
Memory IC type	FLASH
memory width	8
moisture_sensitivity_level	NOT SPECIFIED
Number of digits	1.28E8 words
Number of digits	128M
operating mode	ASYNCHRONOUS
organize	128MX8
Packaging Materials	PLASTIC/EPOXY
ckage_code	TSOP1
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE, THIN PROFILE
serial parallel	PARALLEL
eak_reflow_temperature__cel_	NOT SPECIFIED
gramming_voltage__v_	3
qualification_status	COMMERCIAL
seated_height_max	1.2 mm
surface mount	YES
Temperature level	INDUSTRIAL
terminal coating	TIN LEAD
Terminal form	GULL WING
Terminal spacing	0.5000 mm
Terminal location	DUAL
ime_peak_reflow_temperature_max__s_	NOT SPECIFIED
length	18.4 mm
width	12 mm

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