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1SS420(TPH3,F)

Description
RECTIFIER DIODE,SCHOTTKY,35V V(RRM),SOD-523
CategoryDiscrete semiconductor    diode   
File Size125KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

1SS420(TPH3,F) Overview

RECTIFIER DIODE,SCHOTTKY,35V V(RRM),SOD-523

1SS420(TPH3,F) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.6 V
Maximum non-repetitive peak forward current1 A
Number of components1
Maximum operating temperature100 °C
Maximum output current0.2 A
Maximum repetitive peak reverse voltage35 V
surface mountYES
technologySCHOTTKY
Base Number Matches1
1SS420
TOSHIBA Diode
Silicon Epitaxial Schottky Barrier Type
1SS420
High-Speed Switching Applications
Low reverse current: I
R
= 5
μA
(max)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10 ms)
Power dissipation
Junction temperature
Storage temperature range
Operating temperature range
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
P
*
T
j
T
stg
T
opr
Rating
35
30
300
200
1
150
125
−55~125
−40~100
Unit
V
V
mA
mA
A
mW
°C
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*
Mounted on a glass-epoxy circuit board of 20 × 20 mm,
pad dimensions of 4 × 4 mm.
JEDEC
JEITA
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
I
R
C
T
Test
Circuit
Test Condition
I
F
= 1 mA
I
F
= 10 mA
I
F
= 200 mA
V
R
= 30 V
V
R
= 0, f = 1 MH
z
Min
Typ.
0.29
0.36
0.52
20
Max
0.6
5
μA
pF
V
Unit
Equivalent Circuit
(Top View)
Marking
S6
1
2007-11-01

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