1SS181TE85R2 datasheet, PDF - EEWORLD Datasheet

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1SS181TE85R2: DescriptionDIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode; CategoryDiscrete semiconductor diode; File Size171KB，3 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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1SS181TE85R2 Overview

DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode

1SS181TE85R2 Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
application	FAST RECOVERY
Configuration	COMMON ANODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V
JESD-30 code	R-PDSO-G3
Maximum non-repetitive peak forward current	2 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	125 °C
Maximum output current	0.1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.225 W
Certification status	Not Qualified
Guideline	AEC-Q101
Maximum repetitive peak reverse voltage	85 V
Maximum reverse current	0.5 µA
Maximum reverse recovery time	0.004 µs
Reverse test voltage	80 V
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Base Number Matches	1

1SS181TE85R2 Related Products

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Description	DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode	Diode Switching 85V 0.3A 3-Pin S-Mini T/R	DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode	DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode	DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode
Maker	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor
package instruction	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Is Samacsys	N	N	N	N	N
application	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY
Configuration	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V	1.2 V	1.2 V	1.2 V	1.2 V
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Maximum non-repetitive peak forward current	2 A	2 A	2 A	2 A	2 A
Number of components	2	2	2	2	2
Phase	1	1	1	1	1
Number of terminals	3	3	3	3	3
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C
Maximum output current	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Maximum power dissipation	0.225 W	0.225 W	0.225 W	0.225 W	0.225 W
Guideline	AEC-Q101	AEC-Q101	AEC-Q101	AEC-Q101	AEC-Q101
Maximum repetitive peak reverse voltage	85 V	85 V	85 V	85 V	85 V
Maximum reverse current	0.5 µA	0.5 µA	0.5 µA	0.5 µA	0.5 µA
Maximum reverse recovery time	0.004 µs	0.004 µs	0.004 µs	0.004 µs	0.004 µs
Reverse test voltage	80 V	80 V	80 V	80 V	80 V
surface mount	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Base Number Matches	1	1	1	1	1
ECCN code	EAR99	-	EAR99	EAR99	EAR99
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified

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