1SS181TE85L datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> diode> 1SS181TE85L

1SS181TE85L: DescriptionDIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode; CategoryDiscrete semiconductor diode; File Size171KB，3 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

Download Datasheet Parametric Compare View All

1SS181TE85L Overview

DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode

1SS181TE85L Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Toshiba Semiconductor
package instruction	R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
application	FAST RECOVERY
Configuration	COMMON ANODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V
JESD-30 code	R-PDSO-G3
Maximum non-repetitive peak forward current	2 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	125 °C
Maximum output current	0.1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.225 W
Certification status	Not Qualified
Guideline	AEC-Q101
Maximum repetitive peak reverse voltage	85 V
Maximum reverse current	0.5 µA
Maximum reverse recovery time	0.004 µs
Reverse test voltage	80 V
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

1SS181TE85L Related Products

	1SS181TE85L	1SS181(TE85L,F)	1SS181TE85L2	1SS181TE85R2	1SS181TE85R
Description	DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode	Diode Switching 85V 0.3A 3-Pin S-Mini T/R	DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode	DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode	DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode
Maker	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor
package instruction	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Is Samacsys	N	N	N	N	N
application	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY
Configuration	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V	1.2 V	1.2 V	1.2 V	1.2 V
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Maximum non-repetitive peak forward current	2 A	2 A	2 A	2 A	2 A
Number of components	2	2	2	2	2
Phase	1	1	1	1	1
Number of terminals	3	3	3	3	3
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C
Maximum output current	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Maximum power dissipation	0.225 W	0.225 W	0.225 W	0.225 W	0.225 W
Guideline	AEC-Q101	AEC-Q101	AEC-Q101	AEC-Q101	AEC-Q101
Maximum repetitive peak reverse voltage	85 V	85 V	85 V	85 V	85 V
Maximum reverse current	0.5 µA	0.5 µA	0.5 µA	0.5 µA	0.5 µA
Maximum reverse recovery time	0.004 µs	0.004 µs	0.004 µs	0.004 µs	0.004 µs
Reverse test voltage	80 V	80 V	80 V	80 V	80 V
surface mount	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Base Number Matches	1	1	1	1	1
ECCN code	EAR99	-	EAR99	EAR99	EAR99
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified

Recommended Resources

Sound remote control switch circuit

Audio amplifier circuit for record player

M7120A surface grinder electrical wiring diagram circuit

Field strength meter circuit diagram

4GHZ oscillator circuit

Application of microwave sensing module RD627A

FPGA design ideas finite state machine: ...; 至芯科技FPGA大牛 FPGA/CPLD

About high-end driver and low-end driver of MOS: About high-end driver and low-end driver of MOS...; QWE4562009 Discrete Device

BlueNRG video tutorial: BlueNRG-1 Demo board introduction: [i=s]This post was last edited by littleshrimp on 2021-5-24 16:39[/i]...; littleshrimp ST - Low Power RF

Problems with capacitors in snubber circuits: In a single-ended flyback switching power supply, when the switch is turned off, the leakage inductance of the transformer primary will generate a spike voltage, and an RC or RCD absorption circuit is...; shaorc Analog electronics

[Topmicro Intelligent Display Module Review] 2. Power-on test: After reading the information of the smart display screen in detail, I found that it is very convenient to connect the wires and power on according to the interface in the specification.I searched for...; annysky2012 Test/Measurement

Pingtouge Bluetooth Mesh Gateway Development Kit Trial Experience --- Mesh switch controls Mesh lights: The combination of multiple PHY6220 can be applied to various scenarios, using one of them:Start building the project directly. This time, two projects, mesh_light_node_demo and mesh_switch_node_demo,...; 火辣西米秀 Domestic Chip Exchange

Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

Popular Components