P6SMB170 datasheet, PDF - EEWORLD Datasheet

P6SMB170: Description600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA; CategoryDiscrete semiconductor diode; File Size286KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	R-PDSO-C2
Reach Compliance Code	compli
ECCN code	EAR99
Other features	UL RECOGNIZED
Maximum breakdown voltage	187 V
Minimum breakdown voltage	153 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AA
JESD-30 code	R-PDSO-C2
JESD-609 code	e3
Maximum non-repetitive peak reverse power dissipation	600 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
polarity	UNIDIRECTIONAL
Maximum power dissipation	3 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	138 V
surface mount	YES
technology	AVALANCHE
Terminal surface	Tin (Sn)
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	30
Base Number Matches	1

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