PB1010S datasheet, PDF - EEWORLD Datasheet

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PB1010S: Description10 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size43KB，4 Pages; ManufacturerWon-Top Electronics Co., Ltd.; Websitehttps://www.wontop.com/

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PB1010S Overview

10 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

PB1010S Parametric

Parameter Name	Attribute value
Maker	Won-Top Electronics Co., Ltd.
package instruction	S-PUFM-W4
Contacts	4
Reach Compliance Code	compli
Other features	UL RECOGNIZED
Minimum breakdown voltage	1000 V
Shell connection	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	S-PUFM-W4
Maximum non-repetitive peak forward current	150 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	125 °C
Minimum operating temperature	-65 °C
Maximum output current	10 A
Package body material	PLASTIC/EPOXY
Package shape	SQUARE
Package form	FLANGE MOUNT
Maximum repetitive peak reverse voltage	1000 V
surface mount	NO
Terminal form	WIRE
Terminal location	UPPER

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WTE

POWER SEMICONDUCTORS

PB1000S – PB1010S

10A SINGLE-PHASE BRIDGE RECTIFIER

Features

Diffused Junction

High Current Capability

High Case Dielectric Strength

High Surge Current Capability

Ideal for Printed Circuit Board Application

Plastic Material has UL Flammability 94V-0

Recognized File # E157705

Dim

KBPC-6

Min

Max

14.73

15.75

5.80

6.90

19.00

—

1.00 Ø Typical

1.70

2.72

Hole for #6 screw

3.60

4.00

10.30

11.30

All Dimensions in mm

Mechanical Data

Case: KBPC-6, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Marked on Body

Weight: 3.8 grams (approx.)

Mounting Position: Through Hole for #6 Screw

Mounting Torque: 10 cm-kg (8.8 in-lbs) Max.

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

Maximum Ratings and Electrical Characteristics

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

=25°C unless otherwise specified

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current (Note 1) @T

= 50°C

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

Forward Voltage per leg

Peak Reverse Current

At Rated DC Blocking Voltage

t Rating for Fusing (t<8.3ms) (Note 2)

Typical Junction Capacitance (Note 3)

Typical Thermal Resistance per leg (Note 1)

Operating and Storage Temperature Range

= 5.0A

= 25°C

= 125°C

Symbol

RRM

RWM

R(RMS)

1000S 1001S 1002S 1004S 1006S 1006S 1010S

100

200

140

400

280

600

420

800

560

1000

700

Unit

FSM

, T

STG

150

1.1

5.0

500

127

110

6.0

-65 to +125

µA

°C/W

°C

Note: 1. Mounted on metal chassis.

2. Non-repetitive, for t > 1ms and < 8.3ms.

3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

PB1000S – PB1010S

1 of 4

PB1010S Related Products

	PB1010S	PB1000S	PB1001S	PB1002S	PB1004S	PB1008S	PB1006S
Description	10 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
package instruction	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4
Contacts	4	4	4	4	4	4	4
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli
Other features	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED
Minimum breakdown voltage	1000 V	50 V	100 V	200 V	400 V	800 V	600 V
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
JESD-30 code	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4
Maximum non-repetitive peak forward current	150 A	150 A	150 A	150 A	150 A	150 A	150 A
Number of components	4	4	4	4	4	4	4
Phase	1	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4	4
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	10 A	10 A	10 A	10 A	10 A	10 A	10 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Maximum repetitive peak reverse voltage	1000 V	50 V	100 V	200 V	400 V	800 V	600 V
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER
Maker	Won-Top Electronics Co., Ltd.	-	Won-Top Electronics Co., Ltd.	-	Won-Top Electronics Co., Ltd.	Won-Top Electronics Co., Ltd.	Won-Top Electronics Co., Ltd.

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