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PB1001S

Description
10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size43KB,4 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
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PB1001S Overview

10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

PB1001S Parametric

Parameter NameAttribute value
MakerWon-Top Electronics Co., Ltd.
package instructionS-PUFM-W4
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage100 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeS-PUFM-W4
Maximum non-repetitive peak forward current150 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage100 V
surface mountNO
Terminal formWIRE
Terminal locationUPPER
WTE
POWER SEMICONDUCTORS
PB1000S – PB1010S
Pb
10A SINGLE-PHASE BRIDGE RECTIFIER
Features
!
!
!
!
!
!
!
Diffused Junction
High Current Capability
High Case Dielectric Strength
High Surge Current Capability
Ideal for Printed Circuit Board Application
Plastic Material has UL Flammability 94V-0
Recognized File # E157705
H
G
+
E
~
-
~
A
Dim
A
B
C
D
E
KBPC-6
Min
Max
14.73
15.75
5.80
6.90
19.00
1.00 Ø Typical
1.70
2.72
Hole for #6 screw
G
3.60
4.00
10.30
11.30
H
All Dimensions in mm
Mechanical Data
!
!
!
!
!
!
!
!
Case: KBPC-6, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Marked on Body
Weight: 3.8 grams (approx.)
Mounting Position: Through Hole for #6 Screw
Mounting Torque: 10 cm-kg (8.8 in-lbs) Max.
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
C
B
A
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1) @T
C
= 50°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage per leg
Peak Reverse Current
At Rated DC Blocking Voltage
I
2
t Rating for Fusing (t<8.3ms) (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance per leg (Note 1)
Operating and Storage Temperature Range
@I
F
= 5.0A
@T
A
= 25°C
@T
A
= 125°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
PB
PB
PB
PB
PB
PB
PB
1000S 1001S 1002S 1004S 1006S 1006S 1010S
50
35
100
70
200
140
400
280
10
600
420
800
560
1000
700
Unit
V
V
A
I
FSM
V
FM
I
R
I
2
t
C
j
R
JC
T
j
, T
STG
150
1.1
5.0
500
127
110
6.0
-65 to +125
A
V
µA
A
2
s
pF
°C/W
°C
Note: 1. Mounted on metal chassis.
2. Non-repetitive, for t > 1ms and < 8.3ms.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
PB1000S – PB1010S
1 of 4
© 2006 Won-Top Electronics

PB1001S Related Products

PB1001S PB1000S PB1002S PB1004S PB1010S PB1008S PB1006S
Description 10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
package instruction S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4
Contacts 4 4 4 4 4 4 4
Reach Compliance Code compli compli compli compli compli compli compli
Other features UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
Minimum breakdown voltage 100 V 50 V 200 V 400 V 1000 V 800 V 600 V
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 code S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4
Maximum non-repetitive peak forward current 150 A 150 A 150 A 150 A 150 A 150 A 150 A
Number of components 4 4 4 4 4 4 4
Phase 1 1 1 1 1 1 1
Number of terminals 4 4 4 4 4 4 4
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 10 A 10 A 10 A 10 A 10 A 10 A 10 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Maximum repetitive peak reverse voltage 100 V 50 V 200 V 400 V 1000 V 800 V 600 V
surface mount NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location UPPER UPPER UPPER UPPER UPPER UPPER UPPER
Maker Won-Top Electronics Co., Ltd. - - Won-Top Electronics Co., Ltd. Won-Top Electronics Co., Ltd. Won-Top Electronics Co., Ltd. Won-Top Electronics Co., Ltd.
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