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CRSS037N10N

Description
Power device_MOSFET_12V-300V NMOS
CategoryMOSFET   
File Size568KB,10 Pages
ManufacturerCRMICRO
Websitehttps://www.crmicro.com/
The company takes power semiconductor devices and power/analog integrated circuits as its industrial foundation, and targets the industrial electronics, consumer electronics, automotive electronics, and 5G communications markets. It has technology development and manufacturing platforms for power devices, GaN, MEMS sensors, etc., and can provide high-reliability power devices, modules and other products and application solutions. The low-voltage, medium-voltage and high-voltage power device products developed by the company can be widely used in electric vehicles, solar energy, automotive electronics, mobile phone fast charging, white appliances, general switches, power supplies and other industries.
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CRSS037N10N Overview

Power device_MOSFET_12V-300V NMOS

CRSS037N10N Parametric

Parameter NameAttribute value
PARTNUMBERCRSS037N10N
PACKAGETO-263
POLARITYN
VDS100
IDA120
VTYPE103
VMAX103.7
VTYPE45-
VMAX45-
VGSMIN2
VGSMAX4
QGNC117
CISSPF6920
CRTIME202006
RN285

CRSS037N10N Preview

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CRST040N10N, CRSS037N10N
华润微电子(重庆)有限公司
Features
• Uses CRM(CQ) advanced SkyMOS1 technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
Applications
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
SkyMOS1 N-MOSFET 100V, 3.3mΩ, 120A
Product Summary
V
DS
R
DS(on)
I
D
100V
3.3mΩ
120A
100% Avalanche Tested
CRST040N10N
CRSS037N10N
Package Marking and Ordering Information
Part #
CRSS037N10N
CRST040N10N
Marking
Package
TO-263
TO-220
Packing
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Qty
50pcs
50pcs
-
-
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 25°C (Package limit)
T
C
= 100°C (Silicon limit)
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)
Gate-Source voltage
Power dissipation (T
C
= 25°C)
Operating junction and storage temperature
I
D pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
I
D
183
120
116
480
300
±20
227
-55...+150
A
mJ
V
W
°C
A
Symbol
V
DS
Value
100
Unit
V
©China Resources Microelectronics (Chongqing) Limited
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