FDP2552_NL datasheet, PDF - EEWORLD Datasheet

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FDP2552_NL: Description5A, 150V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN; CategoryThe transistor; File Size1MB，12 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/; Environmental Compliance

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FDP2552_NL Overview

5A, 150V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN

FDP2552_NL Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Rochester Electronics
Parts packaging code	TO-220AB
package instruction	TO-220AB, 3 PIN
Contacts	3
Reach Compliance Code	unknown
Is Samacsys	N
Avalanche Energy Efficiency Rating (Eas)	390 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	150 V
Maximum drain current (ID)	5 A
Maximum drain-source on-resistance	0.036 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Humidity sensitivity level	NOT SPECIFIED
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	COMMERCIAL
surface mount	NO
Terminal surface	TIN
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

FDP2552_NL Related Products

	FDP2552_NL	FDB2552	FDP2552
Description	5A, 150V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN	5A, 150V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN	5A, 150V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN
Is it lead-free?	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to
Maker	Rochester Electronics	Rochester Electronics	Rochester Electronics
Parts packaging code	TO-220AB	D2PAK	TO-220AB
package instruction	TO-220AB, 3 PIN	TO-263AB, 3 PIN	TO-220AB, 3 PIN
Contacts	3	4	3
Reach Compliance Code	unknown	unknown	unknown
Is Samacsys	N	N	N
Avalanche Energy Efficiency Rating (Eas)	390 mJ	390 mJ	390 mJ
Shell connection	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	150 V	150 V	150 V
Maximum drain current (ID)	5 A	5 A	5 A
Maximum drain-source on-resistance	0.036 Ω	0.036 Ω	0.036 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-263AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSSO-G2	R-PSFM-T3
JESD-609 code	e3	e3	e3
Humidity sensitivity level	NOT SPECIFIED	1	NOT APPLICABLE
Number of components	1	1	1
Number of terminals	3	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	SMALL OUTLINE	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260	NOT APPLICABLE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	COMMERCIAL	COMMERCIAL	COMMERCIAL
surface mount	NO	YES	NO
Terminal surface	TIN	MATTE TIN	MATTE TIN
Terminal form	THROUGH-HOLE	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	30	NOT APPLICABLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	1

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