5A, 150V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN
Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
Maker | Rochester Electronics |
Parts packaging code | TO-220AB |
package instruction | TO-220AB, 3 PIN |
Contacts | 3 |
Reach Compliance Code | unknown |
Is Samacsys | N |
Avalanche Energy Efficiency Rating (Eas) | 390 mJ |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 150 V |
Maximum drain current (ID) | 5 A |
Maximum drain-source on-resistance | 0.036 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-220AB |
JESD-30 code | R-PSFM-T3 |
JESD-609 code | e3 |
Humidity sensitivity level | NOT APPLICABLE |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT APPLICABLE |
Polarity/channel type | N-CHANNEL |
Certification status | COMMERCIAL |
surface mount | NO |
Terminal surface | MATTE TIN |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT APPLICABLE |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |
FDP2552 | FDB2552 | FDP2552_NL | |
---|---|---|---|
Description | 5A, 150V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN | 5A, 150V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN | 5A, 150V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN |
Is it lead-free? | Lead free | Lead free | Lead free |
Is it Rohs certified? | conform to | conform to | conform to |
Maker | Rochester Electronics | Rochester Electronics | Rochester Electronics |
Parts packaging code | TO-220AB | D2PAK | TO-220AB |
package instruction | TO-220AB, 3 PIN | TO-263AB, 3 PIN | TO-220AB, 3 PIN |
Contacts | 3 | 4 | 3 |
Reach Compliance Code | unknown | unknown | unknown |
Is Samacsys | N | N | N |
Avalanche Energy Efficiency Rating (Eas) | 390 mJ | 390 mJ | 390 mJ |
Shell connection | DRAIN | DRAIN | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 150 V | 150 V | 150 V |
Maximum drain current (ID) | 5 A | 5 A | 5 A |
Maximum drain-source on-resistance | 0.036 Ω | 0.036 Ω | 0.036 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-220AB | TO-263AB | TO-220AB |
JESD-30 code | R-PSFM-T3 | R-PSSO-G2 | R-PSFM-T3 |
JESD-609 code | e3 | e3 | e3 |
Humidity sensitivity level | NOT APPLICABLE | 1 | NOT SPECIFIED |
Number of components | 1 | 1 | 1 |
Number of terminals | 3 | 2 | 3 |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | FLANGE MOUNT | SMALL OUTLINE | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT APPLICABLE | 260 | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL |
Certification status | COMMERCIAL | COMMERCIAL | COMMERCIAL |
surface mount | NO | YES | NO |
Terminal surface | MATTE TIN | MATTE TIN | TIN |
Terminal form | THROUGH-HOLE | GULL WING | THROUGH-HOLE |
Terminal location | SINGLE | SINGLE | SINGLE |
Maximum time at peak reflow temperature | NOT APPLICABLE | 30 | NOT SPECIFIED |
transistor applications | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON | SILICON |
Base Number Matches | 1 | 1 | 1 |