MS1551 datasheet, PDF - EEWORLD Datasheet

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MS1551: DescriptionRF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M169, 3 PIN; CategoryThe transistor; File Size98KB，4 Pages; ManufacturerADPOW; Websitehttp://www.advancedpower.com/

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MS1551 Overview

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M169, 3 PIN

MS1551 Parametric

Parameter Name	Attribute value
Maker	ADPOW
package instruction	FLANGE MOUNT, R-CDFM-F6
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	28 V
Configuration	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-CDFM-F6
Number of components	1
Number of terminals	6
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

MS1551

RF & MICROWAVE TRANSISTORS

CELLULAR BASE STATION APPLICATIONS

Features

•

850-960 MHz

24 VOLTS

OUT

60 WATTS

= 7.0 dB MINIMUM

DOUBLE STEP INPUT/OUTPUT MATCH

COMMON EMITTER CONFIGURATION

DESCRIPTION:

The MS1551 is designed for 900 MHz cellular radio base station

applications. The MS1551 exhibits high collector efficiency with

excellent thermal characteristics. Double-section internal input/

output matching result in terminal impedance levels easily handled

by the circuit designer.

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25° C)

Symbol

CBO

CEO

EBO

DISS

STG

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Power Dissipation

Device Current

Junction Temperature

Storage Temperature

Value

4.0

175

+200

-65 to +150

Unit

Thermal Data

TH(J-C)

Thermal Resistance Junction-case

1.5

C/W

MSCXXXX.PDF 01-19-99

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