d. Maximum under steady state conditions is 95 °C/W
e. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
g. T
C
= 25 °C
S09-1000-Rev. A, 01-Jun-09
Document Number: 64988
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
9
9
1.
1
3.0
mm
APPLICATIONS
• Load switches
- Notebook
- Netbook
G
S
m
m
m
Top View
-20
0.020
0.028
0.062
30
-6
Single
D
P-Channel MOSFET
SYMBOL
t
5s
R
thJA
TYPICAL
40
MAXIMUM
50
UNIT
Si5471DC
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
V
DS
temperature coefficient
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
a
Forward
transconductance
a
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= -7.3 A, di/dt = 100 A/μs,
T
J
= 25 °C
I
S
= -7.3 A, V
GS
= 0 V
T
C
= 25 °C
V
DD
= -10 V, R
L
= 1.4
,
I
D
-7.3 A, V
GEN
= -10 V, R
g
= 1
V
DD
= -10 V, R
L
= 1.4
,
I
D
-7.3 A, V
GEN
= -4.5 V, R
g
= 1
f = 1 MHz
V
DS
= -10 V, V
GS
= -10 V, I
D
= -9.1 A
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -9.1 A
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= -20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-5 V, V
GS
= -4.5 V
V
GS
= -4.5 V, I
D
= -9.1 A
V
GS
= -2.5 V, I
D
= -7.7 A
V
GS
= -1.8 V, I
D
= -1.6 A
V
DS
= -10 V, I
D
= -9.1 A
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
-
-
-
-
-
-
-
-
-
-0.8
25
14
11
14
5.2
25
-1.2
38
21
-
-
A
V
ns
nC
ns
-
-
-
-
-
-
-
1
-
-
-
-
-
-
-
-
2945
385
370
64
30
6
7
5
32
35
70
33
9
8
78
22
-
-
-
96
45
-
-
10
48
53
105
50
18
16
117
33
ns
nC
pF
-20
-
-
-0.6
-
-
-
25
-
-
-
-
-
-14
3.4
-
-
-
-
-
0.0167
0.0230
0.0365
30
-
-
-
-1.1
± 100
1
10
-
0.0200
0.0280
0.0620
-
S
V
mV/°C
V
nA
μA
A
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S09-1000-Rev. A, 01-Jun-09
Document Number: 64988
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si5471DC
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
25
V
GS
= 5 V thru 2.5 V
20
I
D
- Drain Current (A)
8
I
D
- Drain Current (A)
10
Vishay Siliconix
V
GS
= 2 V
15
6
T
C
= 25 °C
4
T
C
= 125 °C
2
T
C
= - 55 °C
0.0
0.5
1.0
1.5
V
GS
- Gate-to-Source Voltage (V)
2.0
10
5
V
GS
= 1.5 V
0
0.0
0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
3.0
Output Characteristics
0.08
Transfer Characteristics
5000
R
DS(on)
- On-Resistance (Ω)
V
GS
= 1.8 V
0.06
C - Capacitance (pF)
4000
C
iss
3000
0.04
V
GS
= 2.5 V
0.02
V
GS
= 4.5 V
0.00
0
5
10
15
I
D
- Drain Current (A)
20
25
2000
C
oss
1000
C
rss
0
0
5
10
15
V
DS
- Drain-to-Source Voltage (V)
20
On-Resistance vs. Drain Current
10
I
D
= 9.1 A
V
GS
- Gate-to-Source Voltage (V)
Capacitance
1.5
R
DS(on)
- On-Resistance (Normalized)
I
D
= 9.1 A
V
GS
= 4.5 V
1.3
V
GS
= 2.5 V
1.1
8
V
DS
= 10 V
6
V
DS
= 5 V
4
V
DS
= 16 V
2
0.9
0
0
15
30
45
60
Q
g
- Total Gate Charge (nC)
75
0.7
- 50
- 25
0
25
50
75
100
T
J
- Junction Temperature (°C)
125
150
Gate Charge
On-Resistance vs. Junction Temperature
S09-1000-Rev. A, 01-Jun-09
Document Number: 64988
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si5471DC
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.05
I
D
= 9.1 A
Vishay Siliconix
10
T
J
= 150 °C
R
DS(on)
- On-Resistance (Ω)
0.04
I
S
- Source Current (A)
0.03
T
J
= 125 °C
T
J
= 25 °C
1
0.02
T
J
= 25 °C
0.01
0
0
0.3
0.6
0.9
V
SD
- Source-to-Drain Voltage (V)
1.2
0.00
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
GS
- Gate-to-Source Voltage (V)
5.0
Source-Drain Diode Forward Voltage
1.1
50
On-Resistance vs. Gate-to-Source Voltage
40
0.9
I
D
= 250 µA
V
GS(th)
(V)
0.7
Power (W)
30
20
0.5
10
0.3
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
600
Threshold Voltage
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
1 ms
1
T
A
= 25 °C
Single Pulse
0.1
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Single Pulse Power
10 ms
100 ms
1 s, 10 s
DC
Safe Operating Area, Junction-to-Ambient
S09-1000-Rev. A, 01-Jun-09
Document Number: 64988
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si5471DC
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
16
Vishay Siliconix
12
I
D
- Drain Current (A)
8
Package Limited
4
0
0
25
50
75
100
125
T
C
- Case Temperature (°C)
150
Current Derating
a
8
1.6
6
Power (W)
Power (W)
1.2
4
0.8
2
0.4
0
0
25
50
75
100
125
T
C
- Case Temperature (°C)
150
0.0
0
25
50
75
100
125
T
A
- Ambient Temperature (°C)
150
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S09-1000-Rev. A, 01-Jun-09
Document Number: 64988
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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