SI7110DN-T1-E3 datasheet, PDF - EEWORLD Datasheet

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SI7110DN-T1-E3: DescriptionDrain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 13.5A Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 5.3mΩ @ 21.1A, 10V Maximum power consumption Dispersion (Ta=25°C): 1.5W Type: N-channel; CategoryDiscrete semiconductor The transistor; File Size533KB，12 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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SI7110DN-T1-E3 Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 13.5A Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 5.3mΩ @ 21.1A, 10V Maximum power consumption Dispersion (Ta=25°C): 1.5W Type: N-channel

SI7110DN-T1-E3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Maker	Vishay
package instruction	SMALL OUTLINE, S-XDSO-C5
Contacts	8
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	61 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (Abs) (ID)	13.5 A
Maximum drain current (ID)	13.5 A
Maximum drain-source on-resistance	0.0053 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	S-XDSO-C5
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	5
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	3.8 W
Maximum pulsed drain current (IDM)	60 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

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