Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 35A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 7.2mΩ @ 15A, 10V Maximum power Dissipation (Ta=25°C): 52W(Tc) Type: P-channel
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| package instruction | SMALL OUTLINE, S-PDSO-C5 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 20 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 30 V |
| Maximum drain current (ID) | 35 A |
| Maximum drain-source on-resistance | 0.0072 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | S-PDSO-C5 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 5 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | SQUARE |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | P-CHANNEL |
| Maximum pulsed drain current (IDM) | 80 A |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | C BEND |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 30 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
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