TK62N60W5,S1VF(S datasheet, PDF

Datasheet> All Categories > Discrete semiconductor> MOS (field effect tube)> TK62N60W5,S1VF(S

TK62N60W5,S1VF(S: DescriptionDrain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 61.8A Gate-source threshold voltage: 4.5V @ 3.1mA Drain-source on-resistance: 45mΩ @ 30.9A, 10V Maximum power consumption Dispersion (Ta=25°C): 400W(Tc) Type: N-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size246KB，10 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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TK62N60W5,S1VF(S Overview

Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 61.8A Gate-source threshold voltage: 4.5V @ 3.1mA Drain-source on-resistance: 45mΩ @ 30.9A, 10V Maximum power consumption Dispersion (Ta=25°C): 400W(Tc) Type: N-channel

TK62N60W5,S1VF(S Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	600V
Continuous drain current (Id) at 25°C	61.8A
Gate-source threshold voltage	4.5V @ 3.1mA
Drain-source on-resistance	45mΩ @ 30.9A,10V
Maximum power dissipation (Ta=25°C)	400W(Tc)
type	N channel

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