MMBTA42_R1_00001 datasheet, PDF

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MMBTA42_R1_00001: DescriptionSmall Signal Bipolar Transistor,; CategoryDiscrete semiconductor The transistor; File Size153KB，6 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMBTA42_R1_00001 Overview

Small Signal Bipolar Transistor,

MMBTA42_R1_00001 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Objectid	8000639474
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant
ECCN code	EAR99
YTEOL	7.5
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz

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MMBTA42

NPN HIGH VOLTAGE TRANSISTOR

VOLTAGE

300 Volt

POWER

250 mWatt

0.006(0.15)MIN.

0.008(0.20)

0.003(0.08)

0.044(1.10)

0.035(0.90)

0.020(0.50)

0.013(0.35)

FEATURES

• NPN silicon, planar design

• Collector-emitter voltage V

= 300V

• Collector current I

= 500mA

• Lead free in compliance with EU RoHS 2.0

• Green molding compound as per IEC 61249 standard

0.120(3.04)

0.110(2.80)

0.056(1.40)

0.047(1.20)

0.079(2.00)

0.070(1.80)

MECHANICAL DATA

• Case: SOT-23, Plastic

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx weight: 0.0003 ounces, 0.0084 grams

• Marking: A42

0.004(0.10)

0.000(0.00)

ABSOLUTE MAXIMUM RATINGS

PA RA ME TE R

C o lle c to r - E m i tte r Vo lta g e

C o lle c to r - B a s e Vo lta g e

E m i tte r - B a s e Vo lta g e

C o lle c to r C ur re nt C o nti nuo us

S ym b o l

CEO

CBO

EBO

Va lue

300

500

Uni ts

THERMAL CHARACTERISTICS

PA RA ME TE R

Ma x P o we r D i s s i p a ti o n ( No te 1 )

The r ma l Re s i s ta nc e ,J unc ti o n to A mb i e nt

J unc ti o n Te mp e r a ture

S to ra g e Te m p e r a tur e

S ym b o l

TOT

θJ

S TG

Va lue

250

500

- 5 5 to 1 5 0

Uni ts

C /W

Top View

Collector

BASE

COLLECTOR

Note 1 : Transistor mounted on FR-5 board 1 x 0.75 x 0.062 in.

Base

Emitter

EMITTER

July 13,2017REV.05

PAGE . 1

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