Global Mixed-mode Technology
G517
General Description
The G517 is an integrated power switch for
self-powered and bus-powered Universal Serial Bus
(USB) applications.
Several Protection features include current limiting and
thermal shutdown to prevent catastrophic switch fail-
ure caused by increasing power dissipation when con-
tinuous heavy loads or short circuit occurs. A built-in
charge pump is used to drive the N-channel MOSFET
that is free of parasitic body diode to eliminate any
reversed current flow across the switch when it is
powered off. When the output voltage is higher than
input voltage, the power switch is turned off by internal
output reverse-voltage comparator.
FLAG is an open-drain output report over-current or
over-temperature event and has typical 9ms deglitch
timeout period.
Power Distribution Switch
Features
49/70mΩ High-Side MOSFET
Available with Current Limits with Foldback
Operating Range:2.7V to 5.5V
1mS Typical Rise Time
Fast Overcurrent Response -1.5µs (TYPICAL)
Under voltage Lockout
Logic Level Enable Pin, Available with
Active-High or Active-Low Version
No Reverse Current when Power Off
Deglitched Open-Drain Over-Current Flag
Output (FLAG)
Output Reverse-Voltage/Current Protection
SOT-23-5, TSOT-23-6, TDFN2x2-6, WDFN2x2-6,
TSOT-23-6 FC, TSOT-23-5 FC, and MSOP-8
Packages (Halogen Free/Pb Free)
UL Certification_#E232223
CB Test Certification by IEC 60950-1:2005/ EN
60950-1:2006
Applications
High-Side Power Protection Switch
USB Power Management
USB Host and Self-Powered Bubs
USB Bus-Powered Hubs
Hot Plug-In Power Supplies
Battery-Charger Circuits
Pin Configuration
G517AH
OUT 1
GND 2
FLAG/EN 3
6 IN
5 SET
4 DSG
IN 1
GND 2
DSG 3
Thermal
Pad
Typical Application Circuit
G517AH
6 OUT
5 SET
4 FLAG/EN
G517AH
Power Supply
2.7V to 5.5V
IN
OUT
R
DSG
FLAG/EN
DSG
R
SET
SET
0.1µF
Load
22µF
SOT-23-6/TSOT-23-6
G517AL
IN 1
GND 2
EN(EN) 3
6 OUT
5 SET
4 FLAG
OUT 1
SET 2
FLAG 3
TDFN2X2-6
G517AL
6 IN
Thermal
Pad
5 GND
4 EN(EN)
*
1µF
G517AL
Power Supply
2.7V to 5.5V
IN
OUT
0.1µF
FLAG
R
SET
ON
OFF
EN(EN)
SET
22µF
Load
SOT-23-6/TSOT-23-6
G517B/C/D/E/F
OUT 1
GND 2
FLAG 3
4 EN(EN)
5 IN
TDFN2X2-6
G517B/C/D/E/F
GND 1
IN 2
EN(EN) 3
Thermal
Pad
6 OUT
5 OUT
4 FLAG
*
1µF
SOT-23-5
G517F/G
OUT 1
GND 2
FLAG 3
5 IN
WDFN2X2-6
Note: Recommend connecting the Thermal Pad to
the GND for excellent power dissipation.
G517B/C/D/E/F/G
Power Supply
2.7V to 5.5V
IN
OUT
0.1µF
FLAG
ON
OFF
EN(EN)
22µF
Load
G517F/G
OUT 1
GND 2
4 EN(EN)
FLAG 3
6 IN
5 NC
4 EN(EN)
*
1µF
TSOT-23-5 FC
GND 1
IN 2
IN 3
EN(EN) 4
G517F/G
TSOT-23-6 FC
8 OUT
7 OUT
6 OUT
5 FLAG
*:
1µF of input capacitor is enough in most application cases.
If the PCB trace of power rail to IN is long, larger input capacitor is necessary.
MSOP-8
Ver: 0.8
Nov 03, 2015
TEL: 886-3-5788833
http://www.gmt.com.tw
1
Global Mixed-mode Technology
G517
Current
Limit
SET
SET
SET
SET
SET
SET
SET
SET
SET
SET
SET
0.4A
0.4A
0.4A
0.4A
0.8A
0.8A
0.8A
0.8A
1.3A
1.3A
1.3A
1.3A
1.8A
1.8A
1.8A
1.8A
2.5A
2.5A
2.5A
2.5A
2.5A
2.5A
2.5A
2.5A
2.5A
2.5A
3.4A
3.4A
3.4A
3.4A
Ordering Information
ORDER
NUMBER
G517AH1TP1U
G517AH1TB1U
G517AH1RB1U
G517AL1TP1U
G517AL2TP1U
G517AL1TB1U
G517AL2TB1U
G517AL1RB1U
G517AL2RB1U
G517AL1RB1D
G517AL2RB1D
G517B1T11U
G517B2T11U
G517B1U51U
G517B2U51U
G517C1T11U
G517C2T11U
G517C1U51U
G517C2U51U
G517D1T11U
G517D2T11U
G517D1U51U
G517D2U51U
G517E1T11U
G517E2T11U
G517E1U51U
G517E2U51U
G517F1T11U
G517F2T11U
G517F1U51U
G517F2U51U
G517F1TP1U
G517F2TP1U
G517F1TO1U
G517F2TO1U
G517F1P81U
G517F2P81U
G517G1TP1U
G517G2TP1U
G517G1TO1U
G517G2TO1U
MARKING
5AACx
5AACx
5AAC
5AAAx
5AABx
5AAAx
5AABx
5AAA
5AAB
5AAA
5AAB
5AB1x
5AB2x
5AB1
5AB2
5AC1x
5AC2x
5AC1
5AC2
5AD1x
5AD2x
5AD1
5AD2
5AE1x
5AE2x
5AE1
5AE2
5AF1x
5AF2x
5AF1
5AF2
5AF1x
5AF2x
5AF1x
5AF2x
G517F1
G517F2
5AG1x
5AG2x
5AG1x
5AG2x
ENABLE
Active High
Active High
Active High
Active High
Active Low
Active High
Active Low
Active High
Active Low
Active High
Active Low
Active High
Active Low
Active High
Active Low
Active High
Active Low
Active High
Active Low
Active High
Active Low
Active High
Active Low
Active High
Active Low
Active High
Active Low
Active High
Active Low
Active High
Active Low
Active High
Active Low
Active High
Active Low
Active High
Active Low
Active High
Active Low
Active High
Active Low
Output
MOS
R
DS(ON)
70mΩ
60mΩ
60mΩ
70mΩ
70mΩ
60mΩ
60mΩ
60mΩ
60mΩ
60mΩ
60mΩ
75mΩ
75mΩ
70mΩ
70mΩ
75mΩ
75mΩ
70mΩ
70mΩ
75mΩ
75mΩ
70mΩ
70mΩ
75mΩ
75mΩ
70mΩ
70mΩ
65mΩ
65mΩ
64mΩ
64mΩ
49mΩ
49mΩ
49mΩ
49mΩ
56mΩ
56mΩ
49mΩ
49mΩ
49mΩ
49mΩ
56mΩ
56mΩ
RB:TDFN2x2-6
TEMP.
RANGE
-40
o
C to +85
o
C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
-40 C to +85 C
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
PACKAGE
(Green)
TSOT-23-6
SOT-23-6
TDFN2x2-6
TSOT-23-6
TSOT-23-6
SOT-23-6
SOT-23-6
TDFN2x2-6
TDFN2x2-6
TDFN2x2-6
TDFN2x2-6
SOT-23-5
SOT-23-5
WDFN2x2-6
WDFN2x2-6
SOT-23-5
SOT-23-5
WDFN2x2-6
WDFN2x2-6
SOT-23-5
SOT-23-5
WDFN2x2-6
WDFN2x2-6
SOT-23-5
SOT-23-5
WDFN2x2-6
WDFN2x2-6
SOT-23-5
SOT-23-5
WDFN2x2-6
WDFN2x2-6
TSOT-23-6 FC
TSOT-23-6 FC
TSOT-23-5 FC
TSOT-23-5 FC
MSOP8
MSOP8
TSOT-23-6 FC
TSOT-23-6 FC
TSOT-23-5 FC
TSOT-23-5 FC
G517G1P81U
G517G1
Active High
3.4A
G517G2P81U
G517G2
Active Low
3.4A
Note:T1:SOT-23-5 TB: SOT-23-6 TP:TSOT-23-6/TSOT-23-6 FC
P8: MSOP-8
1: Bonding Code
U&D: Tape & Reel
Green : Lead Free / Halogen Free.
-40 C to +85 C
MSOP8
o
o
-40 C to +85 C
MSOP8
U5:WDFN2x2-6 TO:TSOT-23-5 FC
Ver: 0.8
Nov 03, 2015
TEL: 886-3-5788833
http://www.gmt.com.tw
2
Global Mixed-mode Technology
G517
Continuous Power Dissipation (T
A
=+25°C)*
SOT-23-5. . . . . . . . . . . . . . . . . . . . . . . 0.52W
TSOT-23-6 . . . . . . . . . . . . . . . . . . . . . . . . . . .0.52W
TDFN2X2-6/WDFN2X2-6. . . . . . . . . . . . . . . . .0.55W
MSOP-8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.57W
TSOT-23-5/6 FC . . . . . . . . . . . . . . . . . . . . . . . .TBDW
Thermal Resistance Junction to Ambient, (θ
JA
)*
SOT-23-5. . . . . . . . . . . . . . . . . . . . . 240°C/W
TSOT-23-6 . . . . . . . . . . . . . . . . . . . . . . . . .240°C/W
TDFN2X2-6/WDFN2X2-6. . . . . . . . . . . . . . 255°C/W
MSOP-8 . . . . . . . . . . . . . . . . . . . . . . . . . . . .200°C/W
TSOT-23-5/6 FC . . . . . . . . . . . . . . . . . . . . . TBD°C/W
Thermal Resistance Junction to Case, (θ
JC
)
SOT-23-5. . . . . . . . . . . . . . . . . . . . . . . . . . . . .60°C/W
TSOT-23-6. . . . . . . . . . . . . . . . . . . . . . . . . . .60°C/W
TDFN2X2-6/WDFN2X2-6. . . . . . . . . . . . . . . . . 63°C/W
MSOP-8 . . . . . . . . . . . . . . . . . . . . . . . . . . . .55°C/W
TSOT-23-5/6 FC . . . . . . . . . . . . . . . . . . . . . .TBD°C/W
Absolute Maximum Ratings
Terminal Voltage (with respect to GND)
IN Pin Voltage, V
IN
. . . . . . . . . . . . . . . . -0.3V to +6.0V
OUT Pin Voltage, V
OUT
. . . . . . . . . . . . . -0.3V to +6.0V
EN Pin Voltage, V
EN
. . . . . . . . . . . . . . . -0.3V to +6.0V
SET Pin Voltage, V
SET
. . . . . . . . . . .-0.3V to V
IN
+0.3V
FLAG Pin Voltage, V
FLG
. . . . . . . . . . . . -0.3V to +6.0V
DSG Pin Voltage, V
DSG
. . . . . . . . . . . . -0.3V to +6.0V
Junction Temperature. . . . . . . . . . . . . . . . . . . . .150°C
Storage Temperature (T
S
) . . . . . . . . .-65°C to +150°C
Reflow Temperature (soldering, 10sec) . . . . . . .260°C
ESD (HBM)
(1)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2kV
Output ESD Protection . . . . . . . . . . . . . . . . . . . . . . 4kV
Operating Ratings
Supply Voltage (V
IN
) . . . . . . . . . . . . . . . . . . . 3V to 5.5V
Operating Temperature (T
A
). . . . . . . . .-40°C to +85°C
*
Please refer to Minimum Footprint PCB Layout Section.
(1)
Human body model is a 100pF capacitor discharged through a 1.5k
Ω
resistor into each pin.
Electrical Characteristics (G517AH)
V
IN
= 5V, C
IN
=1µF, C
OUT
=1µF, R
L
=10Ω T
A
= 25°C.
The device is not guaranteed to function outside its operating conditions. Parameters with MIN and/or MAX limits are 100%
tested at +25°C, unless otherwise specified.
DESCRIPTION
Operation Voltage
Quiescent Current
Off Supply Current
V
IN
Under-Voltage Lockout
Output MOS R
DS(ON)
SYMBOL
V
IN
I
Q
I
Q(OFF)
V
UVLO
CONDITION
V
IN
=5V, I
OUT
=0, not including I
RSET
V
IN
=5V, FLAG/EN=0
TSOT-23-6
MIN
2.7
---
---
2.0
---
---
2.43
1.8
0.9
0.4
1.2
---
TYP
---
150
20
---
70
60
2.7
2
1
0.5
---
---
1.5
2
3
5
15
1.5
60
0.7
150
50
MAX UNIT
5.5
200
40
2.6
90
75
2.97
2.2
1.1
0.6
---
0.6
2
2.4
4
7
30
---
---
---
225
---
V
V
ms
ms
ms
Ω
µs
mV
ms
°C
A
mΩ
V
µA
µA
V
R
DS(ON)
I
OUT
=1.5A, R
SET
=10.5kΩ
R
SET
=7.68kΩ
R
SET
=10.5kΩ
R
SET
=21kΩ
R
SET
=42kΩ
V
IN
=2.7V to 5.5V
V
IN
=2.7V to 5.5V
R
LOAD
=100Ω, C
OUT
=1µF,
90% Settling
Over Current Condition
Short Circuit Start
V
IN
=5V, see figure 1, 2
V
IN
=5V
SOT-23-6
TDFN2x2-6
Over Current Trigger Point
I
LIM
EN Input Threshold-High VIH
EN Input Threshold-Low VIL
Output Turn-on Rising Time
FLAG Deglitch
Shutdown DSG Pull Low Resistance
t
IOS
Response Time to Short Circuit
Output Reverse-Voltage
Trigger Point (V
OUT
-V
IN
)
Output Reverse-Voltage Deglitch Time
Thermal Shutdown
V
EN(H)
V
EN(L)
Tr
T
FLAG
T
SCS
t
IOS
V
IN
=5V
V
IN
=3.3V
1.0
1.6
2
3
---
---
30
---
---
---
OT
OT
HYS
V
IN
=5V
Rising temperature
Hysteresis
Ver: 0.8
Nov 03, 2015
TEL: 886-3-5788833
http://www.gmt.com.tw
3
Global Mixed-mode Technology
G517
CONDITION
V
IN
=5V, I
OUT
=0,
EN(
EN
) =Active
R
SET
=20kΩ
R
SET
=100kΩ
Electrical Characteristics (G517AL)
V
IN
= 5V, C
IN
=1µF, C
OUT
=1µF, R
L
=10Ω T
A
= 25°C.
The device is not guaranteed to function outside its operating conditions. Parameters with MIN and/or MAX limits are 100%
tested at +25°C, unless otherwise specified.
DESCRIPTION
Operation Voltage
Quiescent Current
Off Supply Current
V
IN
Under-Voltage Lockout
Output MOS R
DS(ON)
SYMBOL
V
IN
I
Q
I
Q(OFF)
V
UVLO
MIN
2.7
---
---
---
1.7
---
---
20
10
2.25
0.9
0.6
0.425
0.264
0.175
---
---
---
---
---
---
1.2
---
TYP
---
150
135
---
2.1
70
60
---
---
2.5
1
0.7
0.5
0.33
0.25
1.67
0.67
0.47
0.33
0.22
0.17
---
---
1.5
2
9
600
1.5
---
5
9
64
150
20
MAX
5.5
---
---
1
2.4
90
75
200
200
2.75
1.1
0.8
0.575
0.4
0.325
---
---
---
---
---
---
---
0.6
2
2.4
15
900
---
---
---
12
74
---
---
UNIT
V
µA
µA
V
mΩ
V
IN
=5.5V, EN(
EN
) =Inactive
TSOT-23-6
R
DS(ON)
I
OUT
=2A, R
SET
=10kΩ
V
IN
=3V
V
IN
=5V
R
SET
=11kΩ
R
SET
=24.9kΩ
R
SET
=37.4kΩ
R
SET
=49.9kΩ
R
SET
=75kΩ
R
SET
=100kΩ
SOT-23-6
TDFN2x2-6
R
SET
Resistor Range
kΩ
Over Current Trigger Point
I
LIM
A
R
SET
=11kΩ, V
IN
>3.5V and V
OUT
<1V
R
SET
=24.9kΩ, V
IN
>3.5V and V
OUT
<1V
Short-Circuit Fold-Back Current
I
SFB
R
SET
=37.4kΩ, V
IN
>3.5V and V
OUT
<1V
R
SET
=49.9kΩ, V
IN
>3.5V and V
OUT
<1V
R
SET
=75kΩ, V
IN
>3.5V and V
OUT
<1V
R
SET
=100kΩ, V
IN
>3.5V and V
OUT
<1V
V
IN
=2.7V to 5.5V
V
IN
=2.7V to 5.5V
R
LOAD
=100Ω, C
OUT
=1µF,
90% Settling
A
EN Input Threshold-High VIH
EN Input Threshold-Low VIL
Output Turn-on Rising Time
FLAG Deglitch
Shutdown OUT Pull Low Resistance
t
IOS
Response Time to Short Circuit
Output Reverse-Current threshold
Output Reverse-Current Deglitch Time
Over Current Regulation Time
Over Current Protection Time
Thermal Shutdown
V
EN(H)
V
EN(L)
Tr
T
FLAG
t
IOS
V
V
ms
ms
Ω
µs
A
ms
ms
ms
°C
V
IN
=5V
V
IN
=3.3V
1.0
1.6
5
---
---
0.5
---
6
54
---
---
FLAG assertion or deassertion
V
IN
=5V, see figure 1, 2
V
IN
=5V
V
IN
=5V
V
IN
=5V
Rising temperature
Hysteresis
T
REG
T
OCP
OT
OT
HYS
Ver: 0.8
Nov 03, 2015
TEL: 886-3-5788833
http://www.gmt.com.tw
4
Global Mixed-mode Technology
G517
CONDITION
MIN
2.7
---
V
IN
=5.5V, EN(
EN
) =Inactive
G517B, I
OUT
=0.1A
G517C, I
OUT
=0.3A
G517D, I
OUT
=0.8A
G517E, I
OUT
=1.3A
G517F, I
OUT
=2.0A
G517G, I
OUT
=2.9A
SOT-23-5
WDFN2x2-6
SOT-23-5
WDFN2x2-6
MSOP-8
TSOT-23-5/6 FC
---
2.2
---
---
---
---
---
---
0.3
0.6
1.1
1.6
2.2
3.1
--
--
--
--
--
--
1.2
---
1
1.8
4
---
---
---
0.4
0.55
---
---
---
Electrical Characteristics (G517B/C/D/E/F/G)
V
IN
= 5V, C
IN
=1µF, C
OUT
=1µF, R
L
=10Ω T
A
= 25°C.
The device is not guaranteed to function outside its operating conditions. Parameters with MIN and/or MAX limits are 100%
tested at +25°C, unless otherwise specified.
PARAMETER
Input Voltage Rage
Quiescent Current
Off Supply Current
V
IN
Under Voltage Lockout
SYMBOL
V
IN
I
Q
I
Q(OFF)
V
UVLO
TYP
---
130
0.1
2.4
78
70
66
64
56
49
0.4
0.8
1.3
1.8
2.5
3.4
0.3
0.5
0.8
1.2
1.7
2.3
---
---
1.5
2.4
9
150
1.5
0.5
---
---
5
140
20
MAX UNIT
5.5
190
1
2.6
95
85
75
76
68
59
0.5
1.0
1.5
2.0
2.8
4.0
--
--
--
--
--
--
---
0.6
2
3
15
225
---
1
--
--
---
---
---
mΩ
V
µA
µA
V
Output MOS R
DS(ON)
R
DS(ON)
Over Current Trigger Point
I
LIM
Short-Circuit Fold-Back Current
I
SFB
G517B
G517C
G517D
G517E
G517F
G517G
G517B, V
IN
>3.5V and V
OUT
<1V
G517C, V
IN
>3.5V and V
OUT
<1V
G517D, V
IN
>3.5V and V
OUT
<1V
G517E, V
IN
>3.5V and V
OUT
<1V
G517F, V
IN
>3.5V and V
OUT
<1V
G517G, V
IN
>3.5V and V
OUT
<1V
A
A
EN Input Threshold-High VIH
EN Input Threshold-Low VIL
Output Turn-on Rising Time
FLAG Deglitch
Shutdown OUT Pull Low Resistance
t
IOS
Response Time to Short Circuit
Output Leakage Current
Output Reverse-Current threshold
Output Reverse-Current Deglitch Time
Thermal Limit
Thermal Limit Hysteresis
V
EN(H)
V
EN(L)
Tr
T
FLAG
t
IOS
R
LOAD
=10Ω, C
OUT
=10µF,
90% Settling
V
IN
=5V
V
IN
=3.3V
FLAG assertion or deassertion
V
IN
=5V, see figure 1,2
EN=”0”, V
OUT
=5V
G517B/C/D/E
T
OCP
OT
OT
HYS
G517F/G
V
IN
=5V
V
V
ms
ms
Ω
µs
µA
A
ms
°C
°C
Ver: 0.8
Nov 03, 2015
TEL: 886-3-5788833
http://www.gmt.com.tw
5
京公网安备 11010802033920号
EEWORLD
