VS-20ETS12THM3, VS-20ATS12HM3
www.vishay.com
Vishay Semiconductors
High Voltage, Input Rectifier Diode, 20 A
FEATURES
2
4
• Glass passivated pellet chip junction
• AEC-Q101 qualified
• Meets JESD 201 class 1A whisker test
• Flexible solution for reliable AC power
rectification
1
3
1
2
2L TO-220AC
3
TO-220AB
Cathode to
base
2, 4
• High surge, low V
F
rugged blocking diode for DC charging
stations
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
Base
cathode
2
APPLICATIONS
• On-board and off-board EV/HEV battery chargers
1
Cathode
3
Anode
1
Anode
3
Anode
• Input rectification
VS-20ETS12THM3
VS-20ATS12HM3
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
FSM
T
J
max.
Package
Circuit configuration
20 A
1200 V
1.1 V
300 A
150 °C
2L TO-220AC, 3L TO-220AB
Single, common anode
These devices are intended for use in main rectification
(single or three phase bridge).
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
Capacitive input filter T
A
= 55 °C,
T
J
= 125 °C common heatsink of 1 °C/W
SINGLE-PHASE BRIDGE
16.3
THREE-PHASE BRIDGE
21
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
10 A, T
J
= 25 °C
CHARACTERISTICS
Sinusoidal waveform
VALUES
20
1200
300
1.0
-40 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-20ETS12THM3, VS-20ATS12HM3
V
RRM
, MAXIMUM
PEAK REVERSE VOLTAGE
V
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1300
I
RRM
AT 150 °C
mA
1
Revision: 06-Jul-2018
Document Number: 96523
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETS12THM3, VS-20ATS12HM3
www.vishay.com
Vishay Semiconductors
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 105 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
20
250
300
316
442
4420
A
2
s
A
2
s
A
UNITS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
20 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.1
10.4
0.85
0.1
1.0
UNITS
V
m
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style 2L TO-220AC
Case style 3L TO-220AB
150
150
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
TEST CONDITIONS
VALUES
-40 to +150
UNITS
°C
DC operation
Mounting surface, smooth, and greased
1.3
°C/W
0.5
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
20ETS12TH
20ATS12H
R
thJC
(DC) = 1.3 °C/W
R
thJC
(DC) = 1.3 °C/W
Maximum Allowable Case
Temperature (°C)
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
Ø
140
130
120
110
100
90
Conduction angle
Ø
Conduction period
30°
60°
90°
120°
180°
DC
25
30
35
30°
90
60°
90° 120°
180°
0
2
4
6
8
10 12 14 16 18 20 22
0
5
10
15
20
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Revision: 06-Jul-2018
Document Number: 96523
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETS12THM3, VS-20ATS12HM3
www.vishay.com
Vishay Semiconductors
300
30
Maxiumum Average Forward
Power Loss (W)
25
20
15
10
5
RMS limit
Peak Half Sine Wave
Forward Current (A)
180°
120°
90°
60°
30°
250
At any rated load condition and
with
rated
V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
200
150
Ø
Conduction angle
T
J
= 150 °C
0
100
50
0
4
8
12
16
20
24
1
10
100
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Number of Equal Amplitude
Half Cycle Current Pulse (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
35
Maxiumum Average Forward
Power Loss (W)
30
25
20
Peak Half Sine Wave
Forward Current (A)
DC
180°
120°
90°
60°
30°
RMS limit
300
250
Maximum non-repetitive surge current
versus
pulse train duration.
Initial T
J
= 150 °C
No
voltage
reapplied
Rated
V
RRM
reapplied
200
15
10
5
0
150
Ø
Conduction period
T
J
= 150 °C
100
50
0
5
10
15
20
25
0.01
0.1
1
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Current (A)
1000
T
J
= 25 °C
100
T
J
= 150 °C
10
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 06-Jul-2018
Document Number: 96523
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETS12THM3, VS-20ATS12HM3
www.vishay.com
Vishay Semiconductors
10
Z
thJC
- Transient Thermal
Impedance (°C/W)
Steady state
value
(DC operation)
1
0.1
Single pulse
0.01
0.0001
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
20
E
T
S
12
T
H
M3
1
1
2
3
2
-
-
-
3
4
5
6
7
8
9
Vishay
Semiconductors
product
Current rating (20 = 20 A)
Circuit configuration:
E = 2L TO-220AC
A = 3L TO-220AB
Package:
T = TO-220
Type of
silicon:
S
=
standard
recovery rectifier
Voltage code x 100 = V
RRM
• None = TO-220AB
• T = True pin TO-220
H = AEC-Q101
qualified
Environmental digit:
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
12 = 1200 V
4
5
6
-
-
-
-
-
-
7
8
9
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-20ETS12THM3
VS-20ATS12HM3
QUANTITY PER T/R
50
50
MINIMUM ORDER QUANTITY
1000
1000
PACKAGING DESCRIPTION
Antistatic plastic tubes
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
2L TO-220AC
3L TO-220AB
2L TO-220AC
3L TO-220AB
www.vishay.com/doc?95259
www.vishay.com/doc?95222
www.vishay.com/doc?95391
www.vishay.com/doc?95028
www.vishay.com/doc?96046
Revision: 06-Jul-2018
Document Number: 96523
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AB
DIMENSIONS
in millimeters and inches
(6)
E
E2
Q
(6)
(7)
D2 (6)
(6) D
D1
1
2
3
C
E1 (6)
L
Base metal
View A - A
c
2x e
e1
0.015
M
B A
M
Lead assignments
Lead tip
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
A2
A
b1, b3
(4)
c
(b, b2)
Plating
c1 (4)
Detail B
H1
(H1)
C
(7)
A
ØP
0.014
M
B A
M
A
B
Seating
plane
A
A1
1
D
C
2 3
D
L1 (2)
Thermal pad
(E)
3xb
3 x b2
Detail B
Section
C - C and D - D
Conforms to JEDEC outline TO-220AB
SYMBOL
A
A1
A2
b
b1
4
b2
b3
4
c
c1
4
D
3
D1
D2
6
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
(2)
Lead dimension and finish uncontrolled in L1
(3)
Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
(4)
Dimension b1, b3 and c1 apply to base metal only
(5)
Controlling dimensions: inches
(6)
Thermal pad contour optional within dimensions E, H1, D2 and
E1
Document Number: 95222
Revision: 08-Mar-11
MILLIMETERS
MIN.
MAX.
4.25
4.65
1.14
1.40
2.56
2.92
0.69
1.01
0.38
0.97
1.20
1.73
1.14
1.73
0.36
0.61
0.36
0.56
14.85
15.25
8.38
9.02
11.68
12.88
INCHES
MIN.
MAX.
0.167
0.183
0.045
0.055
0.101
0.115
0.027
0.040
0.015
0.038
0.047
0.068
0.045
0.068
0.014
0.024
0.014
0.022
0.585
0.600
0.330
0.355
0.460
0.507
NOTES
SYMBOL
E
E1
E2
e
e1
H1
L
L1
ØP
Q
MILLIMETERS
MIN.
MAX.
10.11
10.51
6.86
8.89
-
0.76
2.41
2.67
4.88
5.28
6.09
6.48
13.52
14.02
3.32
3.82
3.54
3.73
2.60
3.00
90° to 93°
INCHES
MIN.
MAX.
0.398
0.414
0.270
0.350
-
0.030
0.095
0.105
0.192
0.208
0.240
0.255
0.532
0.552
0.131
0.150
0.139
0.147
0.102
0.118
90° to 93°
NOTES
3, 6
6
7
6, 7
2
(7)
(8)
Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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