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TPD65R940C

Description
Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 4A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 1Ω @ 1A, 10V Maximum power dissipation (Ta=25°C): 28W(Tc) Type: N channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size495KB,9 Pages
ManufacturerWuxi Unigroup Microelectronics
Websitehttp://www.tsinghuaicwx.com/
Wuxi Ziguang Microelectronics Co., Ltd. is a high-tech enterprise invested by Beijing Tongfang Microelectronics Co., Ltd. It is an integrated circuit design company focusing on the design and development, chip processing, packaging and testing, and product sales of advanced semiconductor power devices and integrated circuits. The company's headquarters is located on the fourth floor of Building D2, China Sensor Network International Innovation Park, Xinwu District, Wuxi. The company's team is composed of a group of members who have worked in well-known semiconductor companies at home and abroad for many years and have rich experience in product design and management. They not only master the world's advanced product development and production technology, but also have rich experience in semiconductor company management. The advanced semiconductor power devices such as SJ MOSFET, DT MOSFET, HV VDMOS, IGBT, IGTO, Half Bridge Gate Driver and related power management integrated circuits developed and produced by the company are widely used in energy saving, green lighting, wind power generation, smart grid, hybrid electric vehicles, instrumentation, consumer electronics and other fields. The company will adhere to the corporate purpose of "serving customers with our efforts and excellent products and benefiting the society", combine world-class advanced technology with the Chinese market, break the monopoly of foreign companies in high-voltage and high-power devices in China, and strive to become a professional brand supplier with advanced technology and first-class quality in the field of power semiconductors, providing customers with cost-effective products and comprehensive services. Today, Tsinghua Unigroup has given TMC a new interpretation - Thinking Makes Change! Thinking makes changes! Therefore, it has put forward a new corporate philosophy: "very TMC, very Innovation", and continuously meet the increasing needs of customers through innovations in thinking, services, products, business, and management.
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TPD65R940C Overview

Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 4A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 1Ω @ 1A, 10V Maximum power dissipation (Ta=25°C): 28W(Tc) Type: N channel

TPD65R940C Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)650V
Continuous drain current (Id) at 25°C4A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance1Ω @ 1A,10V
Maximum power dissipation (Ta=25°C)28W(Tc)
typeN channel
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