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NCE40H20A

Description
Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 200A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 2.6mΩ @ 40A, 10V Maximum power consumption Dispersion (Ta=25°C): 285W (Tc) Type: N-channel NMOS, 40V/200A, RDS=2mR, nominal 24V battery brushless controller only (for electric pickaxes, high cost performance).
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size324KB,7 Pages
ManufacturerWuxi NCE Power Semiconductor Co., Ltd
Websitehttp://www.ncepower.com/
Download Datasheet Parametric View All

NCE40H20A Overview

Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 200A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 2.6mΩ @ 40A, 10V Maximum power consumption Dispersion (Ta=25°C): 285W (Tc) Type: N-channel NMOS, 40V/200A, RDS=2mR, nominal 24V battery brushless controller only (for electric pickaxes, high cost performance).

NCE40H20A Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)40V
Continuous drain current (Id) at 25°C200A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance2.6mΩ @ 40A,10V
Maximum power dissipation (Ta=25°C)285W(Tc)
typeN channel
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