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C3216C0G2A104JT000E

Description
Accuracy: ±5% Capacitance: 100nF Rated voltage: 100V Temperature drift coefficient (dielectric material): C0G Material: C0G
CategoryPassive components    The patch capacitance   
File Size356KB,32 Pages
ManufacturerTDK Corporation
Websitehttp://www.tdk.com
Download Datasheet Parametric View All

C3216C0G2A104JT000E Overview

Accuracy: ±5% Capacitance: 100nF Rated voltage: 100V Temperature drift coefficient (dielectric material): C0G Material: C0G

C3216C0G2A104JT000E Parametric

Parameter NameAttribute value
Accuracy±5%
Capacitance100nF
Rated voltage100V
Temperature drift coefficient (dielectric material)C0G
MULTILAYER CERAMIC CHIP CAPACITORS
C Series
Commercial Grade
Mid Voltage (100 to 630V)
Type:
C1005 [EIA CC0402]
C1608 [EIA CC0603]
C2012 [EIA CC0805]
C3216 [EIA CC1206]
C3225 [EIA CC1210]
C4532 [EIA CC1812]
C5750 [EIA CC2220]
Issue date:
Mar 2015
20150309 / mlcc_commercial_midvoltage_en

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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