|
STD20NF20 |
STF20NF20 |
STP20NF20 |
Description |
Drain-source voltage (Vdss): 200V Continuous drain current (Id) (at 25°C): 18A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 125mΩ @ 10A, 10V Maximum power dissipation (Ta=25°C): 110W(Tc) Type: N channel N channel, 200V, 18A, 1.25Ω@10V |
Drain-source voltage (Vdss): 200V Continuous drain current (Id) (at 25°C): 18A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 125mΩ @ 10A, 10V Maximum power dissipation (Ta=25°C): 30W(Tc) Type: N-channel N-CH 200V 18A |
Drain-source voltage (Vdss): 200V Continuous drain current (Id) (at 25°C): 18A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 125mΩ @ 10A, 10V Maximum power dissipation (Ta=25°C): 110W (Tc) Type: N channel N channel, 200V, 18A, 125mΩ@10V |
Brand Name |
STMicroelectronics |
STMicroelectronics |
STMicroelectronics |
Maker |
STMicroelectronics |
STMicroelectronics |
STMicroelectronics |
package instruction |
SMALL OUTLINE, R-PSSO-G2 |
FLANGE MOUNT, R-PSFM-T3 |
ROHS COMPLIANT, TO-220, 3 PIN |
Contacts |
3 |
3 |
3 |
Reach Compliance Code |
not_compliant |
not_compliant |
not_compliant |
ECCN code |
EAR99 |
EAR99 |
EAR99 |
Factory Lead Time |
6 weeks 2 days |
12 weeks |
12 weeks |
Avalanche Energy Efficiency Rating (Eas) |
110 mJ |
110 mJ |
110 mJ |
Configuration |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage |
200 V |
200 V |
200 V |
Maximum drain current (Abs) (ID) |
18 A |
18 A |
18 A |
Maximum drain current (ID) |
18 A |
18 A |
18 A |
Maximum drain-source on-resistance |
0.125 Ω |
0.125 Ω |
0.125 Ω |
FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
JESD-30 code |
R-PSSO-G2 |
R-PSFM-T3 |
R-PSFM-T3 |
JESD-609 code |
e3 |
e3 |
e3 |
Number of components |
1 |
1 |
1 |
Number of terminals |
2 |
3 |
3 |
Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
Maximum operating temperature |
175 °C |
175 °C |
175 °C |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
Package shape |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
Package form |
SMALL OUTLINE |
FLANGE MOUNT |
FLANGE MOUNT |
Peak Reflow Temperature (Celsius) |
260 |
NOT SPECIFIED |
NOT SPECIFIED |
Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
Maximum power dissipation(Abs) |
90 W |
25 W |
90 W |
Maximum pulsed drain current (IDM) |
72 A |
72 A |
72 A |
Certification status |
Not Qualified |
Not Qualified |
Not Qualified |
surface mount |
YES |
NO |
NO |
Terminal surface |
Matte Tin (Sn) |
Matte Tin (Sn) |
Tin (Sn) |
Terminal form |
GULL WING |
THROUGH-HOLE |
THROUGH-HOLE |
Terminal location |
SINGLE |
SINGLE |
SINGLE |
Maximum time at peak reflow temperature |
30 |
NOT SPECIFIED |
NOT SPECIFIED |
transistor applications |
SWITCHING |
SWITCHING |
SWITCHING |
Transistor component materials |
SILICON |
SILICON |
SILICON |
Samacsys Description |
NULL |
- |
NULL |
Parts packaging code |
- |
TO-220AB |
TO-220AB |
Shell connection |
- |
ISOLATED |
ISOLATED |
JEDEC-95 code |
- |
TO-220AB |
TO-220AB |