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STD20NF20

Description
Drain-source voltage (Vdss): 200V Continuous drain current (Id) (at 25°C): 18A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 125mΩ @ 10A, 10V Maximum power dissipation (Ta=25°C): 110W(Tc) Type: N channel N channel, 200V, 18A, 1.25Ω@10V
CategoryDiscrete semiconductor    The transistor   
File Size887KB,15 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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STD20NF20 Overview

Drain-source voltage (Vdss): 200V Continuous drain current (Id) (at 25°C): 18A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 125mΩ @ 10A, 10V Maximum power dissipation (Ta=25°C): 110W(Tc) Type: N channel N channel, 200V, 18A, 1.25Ω@10V

STD20NF20 Parametric

Parameter NameAttribute value
Brand NameSTMicroelectronics
MakerSTMicroelectronics
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time6 weeks 2 days
Samacsys DescriptionNULL
Avalanche Energy Efficiency Rating (Eas)110 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)18 A
Maximum drain current (ID)18 A
Maximum drain-source on-resistance0.125 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)90 W
Maximum pulsed drain current (IDM)72 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON

STD20NF20 Related Products

STD20NF20 STF20NF20 STP20NF20
Description Drain-source voltage (Vdss): 200V Continuous drain current (Id) (at 25°C): 18A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 125mΩ @ 10A, 10V Maximum power dissipation (Ta=25°C): 110W(Tc) Type: N channel N channel, 200V, 18A, 1.25Ω@10V Drain-source voltage (Vdss): 200V Continuous drain current (Id) (at 25°C): 18A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 125mΩ @ 10A, 10V Maximum power dissipation (Ta=25°C): 30W(Tc) Type: N-channel N-CH 200V 18A Drain-source voltage (Vdss): 200V Continuous drain current (Id) (at 25°C): 18A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 125mΩ @ 10A, 10V Maximum power dissipation (Ta=25°C): 110W (Tc) Type: N channel N channel, 200V, 18A, 125mΩ@10V
Brand Name STMicroelectronics STMicroelectronics STMicroelectronics
Maker STMicroelectronics STMicroelectronics STMicroelectronics
package instruction SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3 ROHS COMPLIANT, TO-220, 3 PIN
Contacts 3 3 3
Reach Compliance Code not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99
Factory Lead Time 6 weeks 2 days 12 weeks 12 weeks
Avalanche Energy Efficiency Rating (Eas) 110 mJ 110 mJ 110 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 200 V 200 V 200 V
Maximum drain current (Abs) (ID) 18 A 18 A 18 A
Maximum drain current (ID) 18 A 18 A 18 A
Maximum drain-source on-resistance 0.125 Ω 0.125 Ω 0.125 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3 e3
Number of components 1 1 1
Number of terminals 2 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 90 W 25 W 90 W
Maximum pulsed drain current (IDM) 72 A 72 A 72 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Tin (Sn)
Terminal form GULL WING THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 30 NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Samacsys Description NULL - NULL
Parts packaging code - TO-220AB TO-220AB
Shell connection - ISOLATED ISOLATED
JEDEC-95 code - TO-220AB TO-220AB

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