STPS30120C
Power Schottky rectifier
Features
■
■
■
■
A1
K
A2
High junction temperature capability
Avalanche rated
Low leakage current
Good trade-off between leakage current and
forward voltage drop
A1
K
K
K
A2
A1
K
A2
Description
Dual center tap Schottky rectifier suited for high
frequency switch mode power supply.
Packaged in TO-220AB, TO-220AB narrow leads,
and I
2
PAK, this device is intended to be used in
notebook and LCD adaptors, desktop SMPS,
providing in these applications a margin between
the remaining voltages applied on the diode and
the voltage capability of the diode.
Figure 1.
V
I
2 x I
O
I
F
V
RRM
V
R
V
AR
I
O
TO-220AB
STPS30120CT
I
2
PAK
STPS30120CR
K
A2
A1
K
Electrical characteristics
(a)
I
"Forward"
TO-220AB narrow leads
STPS30120CTN
Table 1.
X
Device summary
Symbol
Value
2 x 15 A
120 V
175 °C
0.57 V
X
V
I
R
VTo V
F(Io)
V
F
V
F(2xIo)
I
F(AV)
V
RRM
T
j(max)
V
F(typ)
"Reverse"
I
AR
a. V
ARM
and I
ARM
must respect the reverse safe
operating area defined in
Figure 10.
V
AR
and I
AR
are
pulse measurements (t
p
< 1 µs). V
R
, I
R
, V
RRM
and V
F
,
are static characteristics.
January 2012
Doc ID 11213 Rev 4
1/9
www.st.com
9
Characteristics
STPS30120C
1
Characteristics
Table 2.
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
V
ARM(1)
V
ASM(1)
T
stg
T
j
2.
Absolute ratings (limiting values, per diode)
Parameter
Repetitive peak reverse voltage
Forward rms current
Average forward
current
δ =
0.5
T
c
= 145 °C
Per diode
Per device
t
p
= 10 ms sinusoidal
t
p
= 1 µs T
j
= 25 °C
Value
120
30
15
30
180
6700
150
150
-65 to + 175
175
Unit
V
A
A
A
W
V
V
°C
°C
Surge non repetitive forward current
Repetitive peak avalanche power
Maximum repetitive
t = 1 µs, T
j
< 150 °C, I
AR
< 13.4 A
peak avalanche voltage
p
Maximum single pulse
t = 1 µs, T
j
< 150 °C, I
AR
< 13.4 A
peak avalanche voltage
p
Storage temperature range
Maximum operating junction temperature
(2)
1. Refer to
Figure 10
1
dPtot <
condition to avoid thermal runaway for a diode on its own heatsink
Rth(j-a)
dTj
Table 3.
Symbol
R
th(j-c)
R
th(c)
Thermal parameters
Parameter
Junction to case
Coupling
Per diode
Total
Total
Value
2.2
1.3
0.3
Unit
°C/W
°C/W
When the diodes 1 and 2 are used simultaneously :
T
j
(diode 1) = P(diode 1) x
R
th(j-c)
(per diode) + P(diode 2) x
R
th(c)
2/9
Doc ID 11213 Rev 4
STPS30120C
Table 4.
Symbol
I
R(1)
Characteristics
Static electrical characteristics (per diode)
Test conditions
Reverse leakage current
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
V
R
= V
RRM
Min.
Typ.
Max.
15
2.5
7.5
0.74
I
F
= 5 A
0.57
0.61
0.92
I
F
= 15 A
V
0.7
0.74
1.02
I
F
= 30 A
0.83
0.89
Unit
µA
mA
V
F(2)
Forward voltage drop
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
1. Pulse test : tp = 5 ms,
δ
< 2%
2. Pulse test : tp = 380
μ
s,
δ
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.59 x I
F(AV)
+ 0.01 I
F2(RMS)
Figure 2.
Average forward power
Figure 3.
dissipation versus average forward
current (per diode)
I
F(AV)
(A)
18
Average forward current versus
ambient temperature
(
δ
= 0.5, per diode)
P
F(AV)
(W)
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
δ
= 0.05
δ
= 0.1
δ
= 0.2
δ
= 0.5
16
14
R
th(j-a)
=R
th(j-c)
δ
=1
12
10
8
6
R
th(j-a)
=15°C/W
T
4
2
T
I
F(AV)
(A)
δ
=tp/T
14
16
tp
0
18
δ
=tp/T
0
25
tp
50
T
amb
(°C)
75
100
125
150
175
Figure 4.
Normalized avalanche power
derating versus pulse duration
Figure 5.
Normalized avalanche power
derating versus junction
temperature
1
P
ARM
(tp)
P
ARM
(1µs)
1.2
1
P
ARM
(T
j
)
P
ARM
(25 °C)
0.1
0.8
0.6
0.01
0.4
0.2
0.001
0.01
t
p
(µs)
0.1
1
10
100
1000
0
25
T
j
(°C)
50
75
100
125
150
Doc ID 11213 Rev 4
3/9
Characteristics
STPS30120C
Figure 6.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
Figure 7.
Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
Z
th(j-c)
/R
th(j-c)
1.0
0.9
1.E+01
1.E+02
I
R
(mA)
0.8
0.7
0.6
0.5
0.4
0.3
1.E-02
1.E+00
1.E-01
T
j
=150°C
T
j
=125°C
T
j
=100°C
T
j
=75°C
T
j
=50°C
T
0.2
Single pulse
1.E-03
T
j
=25°C
1.E-04
0.1
0.0
1.E-03
1.E-02
t
p
(s)
1.E-01
δ
=tp/T
tp
1.E-05
V
R
(V)
0
10
20
30
40
50
60
70
80
90
100
110
120
1.E+00
Figure 8.
Junction capacitance versus
reverse voltage applied
(typical values, per diode)
Figure 9.
Forward voltage drop versus
forward current (per diode)
C(pF)
1000
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
I
FM
(A)
100
T
j
=125°C
(maximum values)
T
j
=125°C
(typical values)
T
j
=25°C
(maximum values)
100
10
V
R
(V)
10
1
10
100
V
FM
(V)
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Figure 10. Reverse safe operating area (t
p
< 1 µs and T
j
< 150 °C)
18
17
16
15
14
13
12
11
120
I
arm
(A)
V
arm
(V)
130
140
150
160
170
4/9
Doc ID 11213 Rev 4
STPS30120C
Package information
2
Package information
●
●
●
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
Table 5.
TO-220AB dimensions
Dimensions
Ref.
Millimeters
Min.
A
C
H2
Dia
L5
L7
L6
L2
F2
F1
L9
L4
F
G1
G
M
E
D
C
A
Inches
Min.
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
Max.
0.181
0.051
0.107
0.027
0.034
0.066
0.066
0.202
0.106
0.409
Max.
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.70
10.40
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.40
10
D
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
M
Diam.
16.4 typ.
13
2.65
15.25
6.20
3.50
14
2.95
15.75
6.60
3.93
0.645 typ.
0.511
0.104
0.600
0.244
0.137
0.551
0.116
0.620
0.259
0.154
2.6 typ.
3.75
3.85
0.102 typ.
0.147
0.151
Doc ID 11213 Rev 4
5/9