|
N82S191NB |
N82S191ANB |
Description |
IC 2K X 8 OTPROM, 80 ns, PDIP24, Programmable ROM |
IC 2K X 8 OTPROM, 55 ns, PDIP24, Programmable ROM |
Is it Rohs certified? |
incompatible |
incompatible |
Maker |
NXP |
NXP |
package instruction |
DIP, DIP24,.6 |
DIP, DIP24,.6 |
Reach Compliance Code |
unknown |
unknown |
ECCN code |
EAR99 |
EAR99 |
Maximum access time |
80 ns |
55 ns |
JESD-30 code |
R-PDIP-T24 |
R-PDIP-T24 |
JESD-609 code |
e0 |
e0 |
memory density |
16384 bit |
16384 bit |
Memory IC Type |
OTP ROM |
OTP ROM |
memory width |
8 |
8 |
Number of functions |
1 |
1 |
Number of terminals |
24 |
24 |
word count |
2048 words |
2048 words |
character code |
2000 |
2000 |
Operating mode |
ASYNCHRONOUS |
ASYNCHRONOUS |
Maximum operating temperature |
75 °C |
75 °C |
organize |
2KX8 |
2KX8 |
Output characteristics |
3-STATE |
3-STATE |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
encapsulated code |
DIP |
DIP |
Encapsulate equivalent code |
DIP24,.6 |
DIP24,.6 |
Package shape |
RECTANGULAR |
RECTANGULAR |
Package form |
IN-LINE |
IN-LINE |
Parallel/Serial |
PARALLEL |
PARALLEL |
power supply |
5 V |
5 V |
Certification status |
Not Qualified |
Not Qualified |
Maximum slew rate |
0.175 mA |
0.175 mA |
Maximum supply voltage (Vsup) |
5.25 V |
5.25 V |
Minimum supply voltage (Vsup) |
4.75 V |
4.75 V |
Nominal supply voltage (Vsup) |
5 V |
5 V |
surface mount |
NO |
NO |
technology |
BIPOLAR |
BIPOLAR |
Temperature level |
COMMERCIAL EXTENDED |
COMMERCIAL EXTENDED |
Terminal surface |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Terminal form |
THROUGH-HOLE |
THROUGH-HOLE |
Terminal pitch |
2.54 mm |
2.54 mm |
Terminal location |
DUAL |
DUAL |