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2SK3541T2L

Description
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 100mA Gate-source threshold voltage: 1.5V @ 100uA Drain-source on-resistance: 8Ω @ 10mA, 4V Maximum power dissipation (Ta =25°C): 150mW Type: N-channel N-channel, 30V, 0.1A, 8Ω@10V
CategoryDiscrete semiconductor    The transistor   
File Size82KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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2SK3541T2L Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 100mA Gate-source threshold voltage: 1.5V @ 100uA Drain-source on-resistance: 8Ω @ 10mA, 4V Maximum power dissipation (Ta =25°C): 150mW Type: N-channel N-channel, 30V, 0.1A, 8Ω@10V

2SK3541T2L Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionVMT3, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time17 weeks
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)0.1 A
Maximum drain current (ID)0.1 A
Maximum drain-source on-resistance8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
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