BZX84C33VLT116 datasheet, PDF - EEWORLD Datasheet

BZX84C33VLT116: DescriptionAccuracy: - Voltage regulation value (typical value): 31V (Min) ~ 35V (Max) Reverse leakage current: 100nA @ 23V Maximum power: 250mW; CategoryDiscrete semiconductor diode; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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Accuracy: - Voltage regulation value (typical value): 31V (Min) ~ 35V (Max) Reverse leakage current: 100nA @ 23V Maximum power: 250mW

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	ROHM Semiconductor
package instruction	R-PDSO-G3
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	12 weeks
Other features	HIGH RELIABILITY
Configuration	SINGLE
Diode component materials	SILICON
Diode type	ZENER DIODE
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
polarity	UNIDIRECTIONAL
Maximum power dissipation	0.25 W
Nominal reference voltage	33 V
surface mount	YES
technology	ZENER
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
Maximum voltage tolerance	6.06%
Working test current	2 mA
Base Number Matches	1

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