MJD5731T4G datasheet, PDF - EEWORLD Datasheet

MJD5731T4G: DescriptionRated power: 1.56W Collector current Ic: 1A Collector-emitter breakdown voltage Vce: 350V Transistor type: PNP PNP, Vceo=350V, Ic=1A; CategoryDiscrete semiconductor The transistor; File Size120KB，5 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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Rated power: 1.56W Collector current Ic: 1A Collector-emitter breakdown voltage Vce: 350V Transistor type: PNP PNP, Vceo=350V, Ic=1A

Parameter Name	Attribute value
Brand Name	ON Semiconductor
Is it lead-free?	Lead free
Maker	ON Semiconductor
package instruction	ROHS COMPLIANT, PLASTIC, CASE 369C, DPAK-3
Contacts	3
Manufacturer packaging code	369C
Reach Compliance Code	not_compliant
ECCN code	EAR99
Factory Lead Time	10 weeks
Is Samacsys	N
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	350 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power dissipation(Abs)	15 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	10 MHz
Base Number Matches	1

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