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NTTFS5820NLTAG

Description
Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 11A Gate-source threshold voltage: 2.3V @ 250uA Drain-source on-resistance: 11.5mΩ @ 8.7A, 10V Maximum power dissipation (Ta=25°C): 2.7W Type: N channel N channel, 60V, 37A
CategoryDiscrete semiconductor    The transistor   
File Size112KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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NTTFS5820NLTAG Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 11A Gate-source threshold voltage: 2.3V @ 250uA Drain-source on-resistance: 11.5mΩ @ 8.7A, 10V Maximum power dissipation (Ta=25°C): 2.7W Type: N channel N channel, 60V, 37A

NTTFS5820NLTAG Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerON Semiconductor
Parts packaging codeDFN
package instructionSMALL OUTLINE, S-PDSO-F5
Contacts8
Manufacturer packaging code511AB
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time16 weeks
Samacsys DescriptionPower MOSFET

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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