MJD41CT4G datasheet, PDF - EEWORLD Datasheet

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MJD41CT4G: DescriptionRated power: 20W Collector current Ic: 6A Collector-emitter breakdown voltage Vce: 100V Transistor type: NPN NPN, Vceo=100V, Ic=6A; CategoryDiscrete semiconductor The transistor; File Size124KB，7 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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MJD41CT4G Overview

Rated power: 20W Collector current Ic: 6A Collector-emitter breakdown voltage Vce: 100V Transistor type: NPN NPN, Vceo=100V, Ic=6A

MJD41CT4G Parametric

Parameter Name	Attribute value
Brand Name	ON Semiconductor
Is it lead-free?	Lead free
package instruction	ROHS COMPLIANT, PLASTIC, CASE 369C, DPAK-3
Contacts	3
Manufacturer packaging code	369C
Reach Compliance Code	not_compliant
ECCN code	EAR99
Factory Lead Time	1 week
Shell connection	COLLECTOR
Maximum collector current (IC)	6 A
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	20 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	3 MHz
Base Number Matches	1

MJD41CT4G Related Products

	MJD41CT4G	MJD42CT4G
Description	Rated power: 20W Collector current Ic: 6A Collector-emitter breakdown voltage Vce: 100V Transistor type: NPN NPN, Vceo=100V, Ic=6A	Rated power: 1.75W Collector current Ic: 6A Collector-emitter breakdown voltage Vce: 100V Transistor type: PNP NPN, Vceo=100V, Ic=6A
Brand Name	ON Semiconductor	ON Semiconductor
Is it lead-free?	Lead free	Lead free
package instruction	ROHS COMPLIANT, PLASTIC, CASE 369C, DPAK-3	ROHS COMPLIANT, PLASTIC, CASE 369C, DPAK-3
Contacts	3	3
Manufacturer packaging code	369C	369C
Reach Compliance Code	not_compliant	not_compliant
ECCN code	EAR99	EAR99
Factory Lead Time	1 week	4 weeks
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	6 A	6 A
Collector-emitter maximum voltage	100 V	100 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	15	15
JESD-30 code	R-PSSO-G2	R-PSSO-G2
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	2	2
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	NPN	PNP
Maximum power dissipation(Abs)	20 W	20 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	40
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	3 MHz	3 MHz
Base Number Matches	1	1

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