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MJD42CT4G

Description
Rated power: 1.75W Collector current Ic: 6A Collector-emitter breakdown voltage Vce: 100V Transistor type: PNP NPN, Vceo=100V, Ic=6A
CategoryDiscrete semiconductor    The transistor   
File Size124KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MJD42CT4G Overview

Rated power: 1.75W Collector current Ic: 6A Collector-emitter breakdown voltage Vce: 100V Transistor type: PNP NPN, Vceo=100V, Ic=6A

MJD42CT4G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
package instructionROHS COMPLIANT, PLASTIC, CASE 369C, DPAK-3
Contacts3
Manufacturer packaging code369C
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time4 weeks
Shell connectionCOLLECTOR
Maximum collector current (IC)6 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)20 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
Base Number Matches1

MJD42CT4G Related Products

MJD42CT4G MJD41CT4G
Description Rated power: 1.75W Collector current Ic: 6A Collector-emitter breakdown voltage Vce: 100V Transistor type: PNP NPN, Vceo=100V, Ic=6A Rated power: 20W Collector current Ic: 6A Collector-emitter breakdown voltage Vce: 100V Transistor type: NPN NPN, Vceo=100V, Ic=6A
Brand Name ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free
package instruction ROHS COMPLIANT, PLASTIC, CASE 369C, DPAK-3 ROHS COMPLIANT, PLASTIC, CASE 369C, DPAK-3
Contacts 3 3
Manufacturer packaging code 369C 369C
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Factory Lead Time 4 weeks 1 week
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 6 A 6 A
Collector-emitter maximum voltage 100 V 100 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 15 15
JESD-30 code R-PSSO-G2 R-PSSO-G2
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type PNP NPN
Maximum power dissipation(Abs) 20 W 20 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 40 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 3 MHz 3 MHz
Base Number Matches 1 1

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